CTL0343NS-R3 CTMICRO | Alldatasheet
Document overview
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- PDF pages: 11
Technical content
Features
Drain-Source Breakdown Voltage VDSS -20 V Drain-Source On-Resistance RDS(ON) 58m, at VGS= 10V, ID= 3.4A RDS(ON) 66m, at VGS= 4.5V, ID= 2.7A RDS(ON) 88m, at VGS= 2.5V, ID= 1.0A Continuous Drain Current at TC=25℃ ID = -3.1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Power Management Lithium Ion Battery
Description
The CTL0343NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. Gate Source Drain Gate Drain Source
Proprietary & Confidential Page 2 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Test Conditions Min Notes VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current 2.9 A 1 IDM Pulsed Drain Current 12 A 1 PD Total Power Dissipation 1.0 W 2 TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RӨJA4 Thermal Resistance Junction-Ambient (t=10s)
Proprietary & Confidential Page 3 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID= -250μA 30 - - V IDSS Drain-Source Leakage Current VDS = 30V, VGS = 0V - - 1 µ A IGSS Gate-Source Leakage Current VGS = ±12V, VDS = 0V - - ±100 nA On Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RDS(ON) Drain-Source On-Resistance VGS = 10V, ID = 3.4A - 58 75 mΩ 3 VGS = 4.5V, ID = 2.7A - 66 85 mΩ VGS = 2.5V, ID = 1.0A - 88 120 mΩ VGS(th) Gate-Source Threshold Voltage VGS = VDS, I ID =-250μA 0.6 1.0 1.4 V 3 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CISS Input Capacitance VGS =0V, VDS=-10V, f=1MHz f=1MHz - 250 - pF COSS Output Capacitance VDS =10V - 36 - CRSS Reverse Transfer Capacitance f=1MHz - 6 - Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TD(ON) Turn-On Delay Time VDS = 10V , VGS = 4.5V, RG = 6Ω, RL= 10Ω, - 6.5 - ns TR Rise Time - 14 - TD(OFF) Turn-Off Delay Time - 30 - TF Fall Time - 2 - QG Total Gate Charge VDS = -10V , - 4.7 - nC QGS Gate-Source Charge VGS = 4.5V, - 1.9 - QGD Gate-Drain Charge ID = 3.0A - 1.4 -
Proprietary & Confidential Page 4 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ID = 3.4A - 0.8 1.2 V ISD Body Diode Continuous Current - - 2.9 A 1 Note: 1. The power dissipation is limited by 150℃ junction temperature. 2. Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 mm .
2 Oz Copper
- The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 4. Thermal Resistance follow JESD51-3.
Proprietary & Confidential Page 5 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Typical Characteristic Curves
Proprietary & Confidential Page 6 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET
Proprietary & Confidential Page 8 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Package Dimension (SOT-23) Recommended pad layout for surface mount leadform
Proprietary & Confidential Page 9 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Marking Information 0343: Device Number
Ordering Information
Part Number Description Quantity CTL0343PS-R3 SOT-23 Reel 3000 pcs 0 3 4 3
Proprietary & Confidential Page 10 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max.
Proprietary & Confidential Page 11 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.