CTH3004PS-T52 CTMICRO | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • • •• Drain-Source Breakdown Voltage VDSS -40 V
  • • •• Drain-Source On-Resistance R DS(ON) 15mΩ , at VGS = -10V, ID= -12A RDS(ON) 18mΩ , at VGS = -4.5V, ID= -6A
  • • •• Continuous Drain Current at TC=25℃ ID =-30A
  • • •• Advanced high cell density Trench Technology
  • • •• RoHS Compliance & Halogen Free

Applications

  • • •• Load Switch
  • • •• DC/DC Converter
  • • •• LCD Display inverter

Description

The CTH3004PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Drain Gate Source Drain Gate Source

Proprietary & Confidential Page 2 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25 oC Symbol Parameters Test Conditions Min Note VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current @T C=25 ℃ -30 A 1 IDM Pulsed Drain Current -100 A 1 PD Total Power Dissipation @T C=25 ℃ 25 W 2 TSTG Storage Temperature Range -55 to 150 ° C TJ Operating Junction Temperature Range -55 to 150 ° C Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes R/uni04E8JC Thermal Resistance Junction-Case -- -- 5 oC /W 1,4

Proprietary & Confidential Page 3 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25° C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVDSS Drain-Source Breakdown Voltage VGS = 0V, I D= -250 µA -40 - - V IDSS Drain-Source Leakage Current V DS = -40V, V GS = 0V - - -1 µA IGSS Gate-Source Leakage Current VGS = ±20V, V DS = 0V - - ±100 nA On Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RDS(ON) Drain-Source On-Resistance VGS = -10V, I D = -12A - 15 18 mΩ 3 VGS = -4.5V, I D = -6A - 18 25 mΩ 3 VGS(th) Gate-Source Threshold Voltage VGS = V DS , I D =-250 µA -1.5 -1.8 -3.0 V 3 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CISS Input Capacitance VGS =0V, - 2760 3726 pF COSS Output Capacitance VDS =-20V - 260 - CRSS Reverse Transfer Capacitance f=1MHz - 85 - Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TD(ON) Turn-On Delay Time VDS = -15V , R L = 15 Ω, VGS = -10V , RG = 6Ω, ID =-1A - 48 64 ns TR Rise Time - 24 32 TD(OFF) Turn-Off Delay Time - 88 118 TF Fall Time - 34 45 QG Total Gate Charge V DS = -20V , - 25 33 nC QGS Gate-Source Charge V GS = -4.5V, - 11 - QGD Gate-Drain (Miller) Charge I D =-12A - 9.5 -

Proprietary & Confidential Page 4 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage V GS = 0V, I SD = -1.7A - -0.78 -1.2 V 1 ISD Body Diode Continuous Current - - -1.7 A 1 Note: 1. The power dissipation is limited by 150℃ junction temperature. 2. The data tested by pulsed , pulse width ≦ 300μ s , duty cycle ≦ 2% 3. Thermal Resistance follow JESD51-3.

Proprietary & Confidential Page 5 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Typical Characteristic Curves

Proprietary & Confidential Page 6 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET

Proprietary & Confidential Page 8 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Package Dimension (TO-252) Dimensions in mm unless otherwise stated Recommended pad layout for surface mount leadform Dimensions in mm unless otherwise stated

Proprietary & Confidential Page 9 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Marking Information

Ordering Information

Part Number Description Quantity CTH3004PS-T52 TO-252 Reel 2500 pcs CT ：Denotes “ CT Micro” H3004P ：Device Number Y ：Fiscal Year WW ：Work Week A ：Production Code CT H3004P YWWA

Proprietary & Confidential Page 10 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150° C Temperature Max. (Tsmax) 200° C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (t L to t P) 3° C/second max. Liquidous Temperature (T L) 217° C Time (t L) Maintained Above (T L) 60 – 150 seconds Peak Body Package Temperature 260° C +0° C / -5° C Time (t P) within 5° C of 260° C 30 seconds Ramp-down Rate (T P to T L) 6° C/second max Time 25° C to Peak Temperature 8 minutes max.

Proprietary & Confidential Page 11 Jun, 2015 CTH3004PS-T52 P-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.