CTH11055NS CTMICRO | Alldatasheet
Document overview
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- PDF pages: 11
Technical content
Features
Drain-Source Breakdown Voltage VDSS 55V Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A Continuous Drain Current at TC=25℃ ID =110A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Switching Applications Motor Drivers Relay Drivers
Description
These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode. Pin 1 Gate: Drain: Source: Pin 1 Pin 2 Pin 3
Proprietary & Confidential Page 2 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Test Conditions Min Notes VDS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 110 A 1 IDM Pulsed Drain Current 300 A 1 PD Total Power Dissipation 200 W 2 EAS Pulsed Avalanche Rating 850 mJ TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RӨJA Thermal Resistance Junction-Ambient
Proprietary & Confidential Page 3 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID= 250μA 55 - - V IDSS Drain-Source Leakage Current VDS = 55V, VGS = 0V - - 1 µ A IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA On Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RDS(ON) Drain-Source On-Resistance VGS = 10V, ID = 59A - 6.0 8.0 mΩ 3 VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID =250μA 2.0 - 4.0 V 3 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CISS Input Capacitance VGS =0V, VDS=-10V, f=1MHz f=1MHz - 4040 - pF COSS Output Capacitance VDS =25V - 342 - CRSS Reverse Transfer Capacitance f=1MHz - 129 - Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TD(ON) Turn-On Delay Time VDS = 28V , VGS = 10V, RG = 2.5Ω, ID =59A - 28.7 - ns TR Rise Time - 8.6 - TD(OFF) Turn-Off Delay Time - 61.5 - TF Fall Time - 13.12 - QG Total Gate Charge VDS = 10V , - 72.3 - nC QGS Gate-Source Charge VGS = 4.5V, - 21.4 - QGD Gate-Drain (Miller) Charge ID =1A - 15.2 - Trr Reverse Recovery Time ISD = 59A, 40 nS Qrr Reverse Recovered Charge di/dt = 100A/s 50 nC
Proprietary & Confidential Page 4 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ISD = 59 - - 1.2 V ISD Body Diode Continuous Current - - 110 A 1 Note: 1. The power dissipation is limited by 150℃ junction temperature. 2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 3. Thermal Resistance follow JESD51-3.
Proprietary & Confidential Page 5 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Typical Characteristic Curves
Proprietary & Confidential Page 6 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET
Proprietary & Confidential Page 8 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Package Dimension Dimensions in mm unless otherwise stated Note: Dimensions in mm
Proprietary & Confidential Page 9 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Marking Information
Ordering Information
Part Number Description Quantity CTH11055NS TO-220 Tube 50 pcs CT ：CT-Micro 11055N ：Device Number Y ：Fiscal Year WW ：Work Week D ：Production Code CT11055N YWWA
Proprietary & Confidential Page 10 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max.
Proprietary & Confidential Page 11 Aug, 2013 CTH11055NS N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.