CT90AM-18 MITSUBISHI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INSULATED GATE BIPOLAR TRANSISTOR Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS (Tc = 25°C) CT90AM-18 OUTLINE DRAWING Dimensions in mm TO-3PL G Simple drive G Integrated Fast-recovery diode G Small tail loss G Low VCE Saturation Voltage 20MAX. 20.6MIN. 0.5 2.5 4.0 φ3.2 5.45 5.45 GATE COLLECTOR EMITTER COLLECTOR APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers 900 ±25 ±30 120 250 –40 ~ +150 –40 ~ +150 VGE = 0V Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature V V V A A A W VCES VGES VGEM IC ICM IE PC Tj Tstg Symbol Parameter Conditions Ratings Unit
INSULATED GATE BIPOLAR TRANSISTOR Sep. 2000 ELECTRICAL CHARACTERISTICS (Tj = 25°C) ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (ch-c) Rth (ch-c) mA µA V V pF pF pF µs µs µs µs mJ/pls A V µs °C/W °C/W 2.0 4.0 1.55 11000 180 125 0.05 0.10 0.20 0.30 0.6 0.5 1.0 ±0.5 6.0 1.95 1.0 3.0 2.0 0.5 4.0 Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance Thermal resistance Symbol Unit Parameter Test conditions Limits Min. Typ. Max. VCE = 900V, VGE = 0V VGE = ±20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω ICP = 60A, Tj = 125°C, dv/dt = 200V/µs IE = 60A, VGE = 0V IE = 60A, dis/dt = –20A/µs Junction to case Junction to case