CT8124-T52 CTMICRO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • • •• Drain-Source Breakdown Voltage VDSS = 20V
  • • •• Drain-Source On-Resistance R DS(ON) 23mΩ , at VGS = 4.5V, ID= 5.0A RDS(ON) 27mΩ , at VGS = 2.5V, ID= 3.5 A RDS(ON) 34mΩ , at VGS = 1.8V, ID= 2.8 A
  • • •• Continuous Drain Current at TC=25℃ ID = 9.0A
  • • •• Advanced high cell density Trench Technology
  • • •• RoHS Compliance & Halogen Free

Applications

  • • •• Notebook
  • • •• High side switching
  • • •• Power Management

Description

The CT8124 –T52 uses high performance Trench Technology to provide excellent R DS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Drain Gate Source Drain Gate Source

Proprietary & Confidential Page 2 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25 oC Symbol Parameters Test Conditions Min Notes VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID Continuous Drain Current @T C=25 ℃ 9 A 1 IDM Pulsed Drain Current 30 A 1 PD Total Power Dissipation @T C=25 ℃ 2.5 W 2 TSTG Storage Temperature Range -55 to 150 ° C TJ Operating Junction Temperature Range -55 to 150 ° C Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes R/uni04E8JC Thermal Resistance Junction-Case Steady State -- -- 4.5 oC /W 1,3

Proprietary & Confidential Page 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25° C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVDSS Drain-Source Breakdown Voltage VGS = 0V, I D= 250 µA 20 - - V IDSS Drain-Source Leakage Current V DS = 20V, V GS = 0V - - 1 µA IGSS Gate-Source Leakage Current VGS = ±8V, V DS = 0V - - ±100 nA On Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RDS(ON) Drain-Source On-Resistance VGS = 4.5V, I D = 5.0A - 23 33 mΩ 2 VGS = 2.5V, I D =3.5A - 27 40 mΩ 2 V GS = 1.8V, I D =2.8A - 34 51 mΩ 2 VGS(th) Gate-Source Threshold Voltage VGS = V DS , I D =250 µA 0.4 - 1.5 V 2 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CISS Input Capacitance VGS =0V, - 599 - pF COSS Output Capacitance VDS =10V - 81 - CRSS Reverse Transfer Capacitance f=1MHz - 73 - Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TD(ON) Turn-On Delay Time V DS = 10V , V GS = 4.5V, R G = 6Ω, I D =3.6A - 3.5 - ns TR Rise Time - 23 - TD(OFF) Turn-Off Delay Time - 39 - TF Fall Time - 24 - QG Total Gate Charge V DS = 10V , - 7.5 - nC QGS Gate-Source Charge V GS = 4.5V, - 1 - QGD Gate-Drain (Miller) Charge I D =4.5A - 2 -

Proprietary & Confidential Page 4 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage V GS = 0V, I SD = 4.5A - - 1.2 V ISD Body Diode Continuous Current - - 4.5 A 1 Note: 1. The power dissipation is limited by 150℃ junction temperature. 2. The data tested by pulsed , pulse width ≦ 300μ s , duty cycle ≦ 2% 3. Thermal Resistance follow JESD51-3.

Proprietary & Confidential Page 5 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Typical Characteristic Curves

Proprietary & Confidential Page 6 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET

Proprietary & Confidential Page 8 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Package Dimension (TO-252) Dimensions in mm unless otherwise stated Recommended pad layout for surface mount leadform Dimensions in mm unless otherwise stated

Proprietary & Confidential Page 9 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Marking Information

Ordering Information

Part Number Description Quantity CT8124-T52 TO-252 Reel 2500 pcs CT ：Denotes “ CT Micro” 8124 ：Device Number Y ：Fiscal Year WW ：Work Week A ：Production Code CT8124 YWWA

Proprietary & Confidential Page 10 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150° C Temperature Max. (Tsmax) 200° C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (t L to t P) 3° C/second max. Liquidous Temperature (T L) 217° C Time (t L) Maintained Above (T L) 60 – 150 seconds Peak Body Package Temperature 260° C +0° C / -5° C Time (t P) within 5° C of 260° C 30 seconds Ramp-down Rate (T P to T L) 6° C/second max Time 25° C to Peak Temperature 8 minutes max.

Proprietary & Confidential Page 11 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.