CT60AM-18B

CT60AM-18B MITSUBISHI | Alldatasheet

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Feb.1999 CT60AM-18B \` Integrated Fast Recovery Diode VGE = 0V VCE = 0V VCE = 0V TC = 25°C 900 ±20 ±30 120 200 –40 ~ +150 –40 ~ +150 V V V A A A W VCES VGES VGEM IC ICM IE PC Tj Tstg OUTLINE DRAWING Dimensions in mm MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE APPLICATION Microwave ovens, electromagnetic cooking de- vices, rice-cookers, voltage-resonant inverter circuit electric appliances. TO-3PL ConditionsSymbol Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature MAXIMUM RATINGS (Tc = 25°C) Parameter Ratings Unit 20MAX. 5 2620.6MIN. 0.5 2.5 4.0 φ 3.2 5.45 5.45 1 2 3 wr q e q GATE w COLLECTOR e EMITTER r COLLECTOR

Feb.1999 IC = 1mA, VGE = 0V VCE = 900V, VGE = 0V VGE = ±20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VCE = 15V VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, Resistance load, VCC = 300V , VGE = 15V, RG = 10Ω ICP = 60A, Tj = 125°C, dv/dt = 200V/µs IE = 60A, VGE = 0V IE = 60A, di/dt = 20A/µs Junction to case Junction to case V mA µA V V pF pF pF µs µs µs µs mJ/pls A V µs °C/W °C/W 4.0 2.0 5000 125 0.05 0.12 0.30 0.25 0.6 0.5 ±0.5 6.0 2.7 1.0 0.63 4.0 V (BR) CES ICES IGES VGE(th) VCE(sat) C ies C oes C res td (on) tr td (off) tf Etail ICtail VEC Trr R th (j-c) R th (j-c) MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE 900 2.0 0 4 8 12 16 20 IC = 120A 60A 15A 30A TC = 25°C Pulse Test 120 160 200 012345 TC = 25°C Pulse Test VGE = 20V PC = 200W 15V 10V OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE VS.GATE-EMITTER VOLTAGE (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted) Symbol UnitParameter Test conditions Limits Min. Typ. Max. Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tail loss Collector tail current Emitter-collector voltage Reverse recovery time Thermal resistance (IGBT part) Thermal resistance PERFORMANCE CURVES

Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE 100 10123 5 7 1 0 223 5 7101 102 103 td(off) td(on) tf tr Tj = 25°C VCC = 300V VGE = 15V R G = 10Ω 101 102 103 104 10035 7 2 1 0 135 7 2 1 0 235 7 32 Tj = 25°C VGE = 0V f = 1MHZ Cies Coes Cres 100 10123 5 7 1 0 223 5 7 102 103 td(off) td(on) tf tr Tj = 25°C VCC = 300V VGE = 15V IC = 60A 0 80 160 240 320 400 VCE = 250V 400V 600V IC = 60A Tj = 25°C 120 160 200 0 4 8 12 16 20 VCE = 5V Pulse Test 25°C VGE = 0V Pulse Test TC = 25°C COLLECTOR CURRENT VS. GATE-EMITTER VOLTAGE (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR CURRENT I C (A) SWITCHING TIME VS.GATE RESISTANCE (TYPICAL) GATE RESISTANCE R G (Ω ) SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) SWITCHING TIME (ns) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) COLLECTOR-EMITTER VOLTAGE V CE (V) CAPACITANCE Cies, Coes, Cres (pF) EMITTER-COLLECTOR VOLTAGE V EC (V) TRANSFER CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) GATE CHARGE Q g (nc) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) GATE-EMITTER VOLTAGE V GE (V)

Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE 2.0 3.0 4.0 5.0 6.0 7.0 –50 0 50 100 150 VCE = 400V IC = 20mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGE = 0V IC = 1mA 10–5 10–2 10–1 100 23 5723 57 10–123 57 10–210–3 100 23 57 101 10–2 10–1 23 57 10–323 57 10–457 10–5 10–2 10–1 100 101 23 5723 57 10–123 57 10–210–3 100 23 57 101 10–2 10–1 23 57 10–323 57 10–457 THRESHOLD VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) GATE-EMITTER THRESHOLD VOLTAGE VGS (th) (V) JUNCTION TEMPERATURE t j (°C) CHANNEL TEMPERATURE t j (°C) BREAKDOWN VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) COLLECTOR-EMITTER BREAKDOWN VOLTAGE V (BR) CES (t°C) COLLECTOR-EMITTER BREAKDOWN VOLTAGE V (BR) CES (25°C) IGBT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (j–c) (°C/W) DIODE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (j–c) (°C/W)