CT3150 CTMICRO | Alldatasheet

Document overview

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Technical content

Features

  • • •• Peak Output Current : IOP = ±1.0A (max)
  • • •• Threshold Input Current: IFLH = 5 mA (max)
  • • •• Common mode transient immunity : ±20kV/ µs (min ）
  • • •• Under voltage lock out (UVLO) protection with hysteresis
  • • •• Regulatory Approvals /square6 UL - UL1577 (E364000) /square6 VDE - EN60747-5-5(VDE0884-5) (Pending Approval) /square6 CQC – GB4943.1, GB8898 /square6 IEC60065, IEC60950

Description

The CT3150 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices.

Applications

  • • •• Isolated IGBT/Power MOSFET gate drive
  • • •• Industrial Inverter
  • • •• AC brushless and DC motor drives
  • • •• Induction Heating

Proprietary & Confidential Page 2 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Truth Table LED Vcc-VEE Positive Going Vcc-VEE Negative Going Output Off 0 to 30 V 0 to 30V Low On 0 to 6.5V 0 to 6V Low On 6.5 to 8.3V 6 to 8V Transition On 8.3 to 30V 8 to 30V High Absolute Maximum Rating at 25 oC Symbol Parameters Ratings Units Notes VISO Isolation voltage 5000 VRMS 1 TOPR Operating temperature -40 ~ +100 0C TSTG Storage temperature -55 ~ +125 0C TSOL Soldering temperature 260 0C 2 PT Total Power Dissipation 300 mW fOPR Operating Frequency 50 kHz 3 Emitter IF Forward current 25 mA IFP Peak forward current (50% duty, 1ms P.W) 1 A VR Reverse voltage 5 V PI Input Power dissipation 45 mW Detector PO Output Power dissipation 250 mW VO(PEAK) Peak Output Voltage 35 V IOPH Output High Peak Current -1.0 A 4 IOPL Output Low Peak Current 1.0 A 4 VCC Supply voltage 35 V Notes 1. AC for 1 minute, RH = 40 ~ 60%. 2. For 10 second peak 3. Exponential Waveform, IO(PEAK) ≤ |1.0A|, Pulse Width ≤ 0.3us 4. Pulse Width = 10us, Duty = 1.0%

Proprietary & Confidential Page 3 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Recommended Operating Conditions Characteristics Symbol Min. Typ. Max. Unit Input Current I F(ON) 7.5 - 10 mA Input Voltage V F(OFF) 0 - 0.8 V Supply Voltage V CC 10 - 30 V Peak Output Current I OPH /IOPL - - ±1.0 A Operating Temperature Topr -40 - 100 oC

Electrical Characteristics

Typical values are measured at Vcc=30V, VEE = Gnd, T A = -40 0C to 100 0C (unless otherwise specified) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VF Forward Voltage I F = 5mA - 1.4 1.7 V VR Reverse Voltage I R = 10 µA 5.0 - - V ∆VF/∆TA Temperature coefficient of forward voltage I F =5mA - -1.7 - mV/° C Detector Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes ICCL Logic Low Supply Current V F = 0 to 0.8V, V O= Open - 1.95 3 mA ICCH Logic High Supply Current I F= 7mA to 10mA, VO= Open - 1.98 3 Transfer Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VOH High Level Output Voltage I F= 5mA, I O= -100mA V CC -4V VCC -0.3 V V VOL Low Level Output Voltage V CC = 30V, I O= 100mA - 0.28 1.0 IOPH High Level Output Current VCC = 30V, V6-5= 4V, I F= 5mA - -1 -0.5 A IOPL Low Level Output Current VCC = 30V, V6-5= 2.5V, I F= 0mA 0.5 0.75 - A VCC = 30V, V6-5= 10V, I F= 0mA 1.0 1.5 - IFLH Input Threshold Current V O> 5V, V CC = 30V - 2.6 5 mA VFHL Input Threshold Voltage V O< 5V, V CC = 30V 0.8 - - V

Proprietary & Confidential Page 4 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Typical values are measured at Vcc=30V, VEE = Gnd, T A = -40 0C to 100 0C (unless otherwise specified) Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TPHL High to Low Propagation Delay IF= 7 to 16mA, C g= 3nF, Rg= 47 /uni2126 - 110 200 ns TPLH Low to High Propagation Delay - 120 200 ns PWD Pulse Width Distortion - - 45 ns tPSK Propagation Delay Skew - - 38 ns tr Rise Time - 30 100 ns tf Fall Time - 15 60 ns |CM H| Common Mode Transient High VCC = 30V, TA= 25 0C, VCM = 1kV IF= 7 to 16mA VO(min) =26V -20 - - kV/ µs |CM L| Common Mode Transient Low IF= 0mA VO(max)=1V 20 - - kV/ µs

Proprietary & Confidential Page 5 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Typical Characteristic Curves

Proprietary & Confidential Page 6 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler

Proprietary & Confidential Page 7 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler

Proprietary & Confidential Page 8 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler

Proprietary & Confidential Page 9 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Package Dimension Dimensions in mm unless otherwise stated Standard DIP – Through Hole Gullwing (400mil) Lead Forming – Through Hole (M Ty pe)

Proprietary & Confidential Page 10 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Surface Mount Lead Forming (S Type) Surface Mount (Low Profile) Lead Forming (SL Type)

Proprietary & Confidential Page 11 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Recommended Solder Mask Dimensions in mm unless otherwise stated Device Marking CT : Denotes “CT Micro” 3150 : Product Number V : VDE Option Y : Fiscal Year WW : Work Week K : Production Code CT 3150 VYWWK

Proprietary & Confidential Page 12 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler

Ordering Information

CT3150(V)(Y)(Z) V = VDE Option ( V or None) Y = Lead form option (S, SL, M or none) Z = Tape and reel option (T1, T2 or none) Option Description Quantity None Standard 8 Pin Dip 40 Units/Tube M Gullwing (400mil) Lead Forming 40 Units/Tube S(T1) Surface Mount Lead Forming – With Option 1 Taping 10 00 Units/Reel S(T2) Surface Mount Lead Forming – With Option 2 Taping 10 00 Units/Reel SL(T1) Surface Mount (Low Profile) Lead Forming– With Option 1 Taping 1000 Units/Reel SL(T2) Surface Mount (Low Profile) Lead Forming – With Optio n 2 Taping 1000 Units/Reel

Proprietary & Confidential Page 13 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Carrier Tape Specifications Dimensions in mm unless otherwise stated Option S(T1) & SL(T1) Option S(T2) & SL(T2)

Proprietary & Confidential Page 14 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150° C Temperature Max. (Tsmax) 200° C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (t L to t P) 3° C/second max. Liquidous Temperature (T L) 217° C Time (t L) Maintained Above (T L) 60 – 150 seconds Peak Body Package Temperature 260° C +0° C / -5° C Time (t P) within 5° C of 260° C 30 seconds Ramp-down Rate (T P to T L) 6° C/second max Time 25° C to Peak Temperature 8 minutes max.

Proprietary & Confidential Page 15 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.