CT2N7002E-R3 CTMICRO | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Drain-Source Breakdown Voltage V DSS 60 V
  • Drain-Source On-Resistance RDS(ON) 4.15 Ω , at V GS = 10V, I DS = 500mA RDS(ON) 4.7 Ω , at V GS = 5.0V, I DS = 500mA
  • Continuous Drain Current at T A=25 ℃ ,ID = 500mA
  • Advanced high cell density Trench Technology
  • RoHS Compliance & Halogen Free
  • ESD protection

Applications

  • Cellular phone
  • Notebook
  • Power management

Description

The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Gate Source Drain Gate Drain Source

Proprietary & Confidential Page 2 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25 oC Symbol Parameters Ratings Units Notes VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current @T A=25 ℃ 500 mA 1 IDM Pulsed Drain Current 1200 mA 1 PD Total Power Dissipation @T A=25 ℃ 0.35 W 2 TSTG Storage Temperature Range -55 to 150 oC TJ Operating Junction Temperature Range -55 to 150 oC Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes R/uni04E8JA Thermal Resistance Junction-Ambient (t=10s) - 360 - oC /W 1,4

Proprietary & Confidential Page 3 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25° C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVDSS Drain-Source Breakdown Voltage VGS =0V, I D= 250µA 60 - - V IDSS Drain-Source Leakage Current V DS = 60V, V GS = 0V - - 1 µ A IGSS Gate-Source Leakage Current VGS = ±16V, V DS = 0V - - 10 /uni00B5A On Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RDS(ON) Drain-Source On-Resistance VGS = 10V, I D = 500mA - 4.15 7.5 Ω VGS = 5.0V, I D = 500mA - 4.7 7.5 Ω VGS(TH) Gate-Source Threshold Voltage V GS = V DS , I D =250µA 1.0 2.0 3.0 V 3 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CISS Input Capacitance VDS = 25V , VGS = 0V, f=1MHz - 17 - pF COSS Output Capacitance - 6 - CRSS Reverse Transfer Capacitance - 10 - Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TD(ON) Turn-On Delay Time VDS = 15V , V GS = 10V, RG = 25 Ω, I D =500mA - 1.4 - ns TR Rise Time - 16.3 - TD(OFF) Turn-Off Delay Time - 4.4 - TF Fall Time - 10 QG Total Gate Charge VDS = 15V , V GS = 5V, ID = 500mA - 0.06 - nC QGS Gate-Source Charge - 0.43 - QGD Gate-Drain (Miller) Charge - 0.12 -

Proprietary & Confidential Page 4 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage V GS = 0V, I D = 500mA 0.96 1.2 V ISD Body Diode Continuous Current 500 mA 1 Note: 1. The power dissipation is limited by 150 ℃ junction temperature. 2. Device mounted on a glass-epoxy board 3. The data tested by pulsed , pulse width /uni2266 300 µ s , duty cycle /uni2266 2% 4. Thermal Resistance follow JESD51-3. FR-4 25.4 × 25.4 mm .

2 Oz Copper

Proprietary & Confidential Page 5 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Typical Characteristic Curves

Proprietary & Confidential Page 6 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET

Proprietary & Confidential Page 8 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Package Dimension(SC-59) Recommended pad layout for surface mount leadform

Proprietary & Confidential Page 9 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Marking Information 7002E : Device Number

Ordering Information

Part Number Description Quantity CT2N7002E-R3 SC-59 Reel 3000 pcs 7 0 0 2 E

Proprietary & Confidential Page 10 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150° C Temperature Max. (Tsmax) 200° C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (t L to t P) 3° C/second max. Liquidous Temperature (T L) 217° C Time (t L) Maintained Above (T L) 60 – 150 seconds Peak Body Package Temperature 260° C +0° C / -5° C Time (t P) within 5° C of 260° C 30 seconds Ramp-down Rate (T P to T L) 6° C/second max Time 25° C to Peak Temperature 8 minutes max.

Proprietary & Confidential Page 11 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS C RITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.