CT2312-R3 CTMICRO | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Drain-Source Breakdown Voltage V DSS 20 V
  • Drain-Source On-Resistance RDS(ON) 22mΩ , at V GS = 4.5V, I DS = 4.5A RDS(ON) 27mΩ , at V GS = 2.5V, I DS = 4.0A
  • Continuous Drain Current at TA=25 ℃ I D = 4.5A
  • Advanced high cell density Trench Technology
  • RoHS Compliance & Halogen Free

Applications

  • Power Management
  • Portable Equipment
  • Load Switch
  • DSC

Description

The CT2312-R3 uses high performance Trench Technology to provide excellent R DS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source

Proprietary & Confidential Page 2 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25 oC Symbol Parameters Ratings Units Notes VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID Continuous Drain Current @T A=25 ℃ 4.5 A 1 IDM Pulsed Drain Current 13.5 A 1 PD Total Power Dissipation @T A=25 ℃ 1.25 W 2 TSTG Storage Temperature Range -55 to 150 oC TJ Operating Junction Temperature Range -55 to 150 oC Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes R/uni04E8JA Thermal Resistance Junction-Ambient (t=10s) - 175 - oC /W 1,4

Proprietary & Confidential Page 3 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25° C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVDSS Drain-Source Breakdown Voltage VGS =0V, I D= 250µA 20 - - V IDSS Drain-Source Leakage Current V DS = 20V, V GS = 0V - - 1 µ A IGSS Gate-Source Leakage Current VGS = ±8V, V DS = 0V - - ±100 nA On Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes RDS(ON) Drain-Source On-Resistance VGS = 4.5V, I D = 4.5A - 22 33 m Ω Fig 4 VGS = 2.5V, I D = 4.0A - 27 40 m Ω VGS(TH) Gate-Source Threshold Voltage V GS = V DS , I D =250µA 0.4 - 1.0 V Fig 5 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CISS Input Capacitance VDS = 8V , VGS = 0V, f=1MHz - 599 - pF Fig 3 COSS Output Capacitance - 81 - CRSS Reverse Transfer Capacitance - 73 - Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TD(ON) Turn-On Delay Time VDS = 10V , V GS = 4.5V, RG = 6Ω, I D =1A - 3.5 - ns Fig 11 & 12 TR Rise Time - 23 - TD(OFF) Turn-Off Delay Time - 39 - TF Fall Time - 24 QG Total Gate Charge VDS = 10V , V GS = 4.5V, ID = 4.5A - 7.5 - nC Fig 9 & 10 QGS Gate-Source Charge - 1 - QGD Gate-Drain (Miller) Charge - 2 -

Proprietary & Confidential Page 4 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage V GS = 0V, I SD = 4.5A 1.2 V ISD Body Diode Continuous Current 4.5 A 1 Note: 1. The power dissipation is limited by 150 ℃ junction temperature. 2. Device mounted on a glass-epoxy board 3. The data tested by pulsed , pulse width /uni2266 300 µ s , duty cycle /uni2266 2% 4. Thermal Resistance follow JESD51-3. FR-4 25.4 × 25.4 mm .

2 Oz Copper

Proprietary & Confidential Page 5 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Typical Characteristic Curves

Proprietary & Confidential Page 6 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET

Proprietary & Confidential Page 8 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Package Dimension (SC-59) Recommended pad layout for surface mount leadform

Proprietary & Confidential Page 9 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Marking Information 2312 : Device Number

Ordering Information

Part Number Description Quantity CT2312-R3 SC-59 Reel 3000 pcs 2 3 1 2

Proprietary & Confidential Page 10 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150° C Temperature Max. (Tsmax) 200° C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (t L to t P) 3° C/second max. Liquidous Temperature (T L) 217° C Time (t L) Maintained Above (T L) 60 – 150 seconds Peak Body Package Temperature 260° C +0° C / -5° C Time (t P) within 5° C of 260° C 30 seconds Ramp-down Rate (T P to T L) 6° C/second max Time 25° C to Peak Temperature 8 minutes max.

Proprietary & Confidential Page 11 Jun, 2015 CT2312-R3 N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS C RITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.