CSDD-25M_10 CENTRAL | Alldatasheet
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SILICON CONTROLLED RECTIFIER
25 AMP, 600 THRU 800 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CSDD-25M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSDD-25M CSDD-25N UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 600 800 V RMS On-State Current (TC=90°C) I T(RMS) 25 A Peak Non-Repetitive Surge Current, t=8.3ms I TSM 260 A Peak Non-Repetitive Surge Current, t=10ms I TSM 250 A I2t Value for Fusing, t=10ms I 2t 310 A 2s Peak Gate Power, tp=10μs P GM 40 W Average Gate Power Dissipation P G(AV) 1.0 W Peak Forward Gate Current, tp=10μs I FGM 4.0 A Peak Forward Gate Voltage, tp=10μs V FGM 16 V Peak Reverse Gate Voltage, tp=10μs V RGM 5.0 V Critical Rate of Rise of On-State Current di/dt 100 A/μs Operating Junction Temperature T J -40 to +125 °C Storage Temperature T stg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 1.3 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM 10 μA IDRM, IRRM Rated V DRM, VRRM, TC=125°C 4.0 mA IGT V D=12V, RL=10Ω 4.2 30 mA IH I T=100mA 12.5 50 mA VGT V D=12V, RL=10Ω 0.65 1.50 V VTM I TM=50A, tp=380μs 1.80 V dv/dt V D= 2/3 VDRM, TC=125°C 200 V/μs D2PAK CASE R2 (17-February 2010) www.centralsemi.com
SILICON CONTROLLED RECTIFIER LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER D2PAK CASE - MECHANICAL OUTLINE www.centralsemi.com R2 (17-February 2010)