CSD10060 CREE | Alldatasheet

Document overview

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Technical content

Features

  • 600-Volt Schottky Rectifier
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switch Mode Power Supplies
  • Power Factor Correction - Typical PFC P out : 1000W-2000W
  • Motor Drives - Typical Power : 3HP-5HP Package TO-263-2 TO-220-2 Maximum Ratings Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V IF(AVG) Average Forward Current 10

16.5 A TC=150˚C

TC=125˚C IF(Peak) Peak Forward Current 23 A TC=125˚, TREP<1 mS, Duty=0.5 IFRM Repetitive Peak Forward Surge Current 43

29 A TC=25˚C, tP=10 ms, Half Sine Wave

TC=125˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 77 A TC=25˚C, tP=1.5 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 250 A TC=25˚C, tP=10 µs, Pulse Ptot Power Dissipation 136.3

45.4 W TC=25˚C

TC=125˚C TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TO-220 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw PIN 1 PIN 2 CASE Part Number Package Marking CSD10060A TO-220-2 CSD10060 CSD10060G TO-263-2 CSD10060 VRRM = 600 V IF(AVG) = 10 A Qc = 28 nC

CSD10060 Rev. S

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8

2.4 V IF = 10 A TJ=25°C

IF = 10 A TJ=175°C IR Reverse Current 50 100 200 1000 μA VR = 600 V TJ=25°C VR = 600 V TJ=150°C QC Total Capacitive Charge 28 nC VR = 600 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 550 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit RθJC Thermal Resistance from Junction to Case 1.1 °C/W Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

Figure 6. Power Derating

CSD10060 Rev. S POS Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 E .590 .615 14.986 15.621 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 J R 0.197 R 0.197 L .025 .036 .635 .914 M .045 .055 1.143 1.397 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° T 3° 6° 3° 6° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish A C E D G H B J L M N F P Q S T U V W X Y M in M ax M in M ax A .395 .410 10.033 10.414 B .235 .255 5.969 6.477 C .102 .112 2.591 2.845 D .337 .337 8.560 8.560 E .590 .610 14.986 15.494 F .149 .153 3.785 3.886 G 1.127 1.147 28.626 29.134 H .530 .550 13.462 13.970 J L .028 .036 .711 .914 M .045 .055 1.143 1.397 N .195 .205 4.953 5.207 P .170 .180 4.318 4.572 Q .048 .054 1.219 1.371 S 3° 5° 3° 5° T 3° 5° 3° 5° U 3° 5° 3° 5° V .100 .110 2.54 2.794 W .014 .021 .356 .533 X 3° 5° 3° 5° Y .395 .410 10.033 10.414 Z .130 .150 3.302 3.810 Inches M illim etersP OS R0.010 R 0.254 1 2 Z Package Dimensions Package TO-220-2 PIN 1 PIN 2 CASE Note: * Tab “E” may not be present Package Dimensions Package TO-263-2 PIN 1 PIN 2 CASE POS Inches Millimeters Min Max Min Max A .396 .406 10.058 10.312 B .297 .303 7.544 7.696 C .057 .063 1.448 1.600 D .237 .243 6.015 6.167 E* 0.00 .070 0.00 1.778 F .048 .062 1.219 1.575 G .100 TYP 2.540 TYP H .335 .345 8.509 8.763 J .028 .034 .711 .864 K 2˚ 4˚ 2˚ 4˚ L .170 .180 4.318 4.572 M .048 .052 1.219 1.321 N .595 .615 15.113 15.621 P 0.00 0.10 0.00 .254 Q R0.018 TYP R0.022 TYP R0.457 TYP R0.559 TYP R .090 .110 2.286 2.794 S .013 .017 .330 .432 U .103 .107 2.616 2.718 V R0.028 TYP R0.032 TYP R0.711 TYP R0.813 TYP W — 5.0˚ — 5.0˚

6 CSD10060 Rev. S This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2006-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power VT RT Diode Model CSD10060 Vf T = VT + If*RT Recommended Solder Pad Layout Part Number Package Marking CSD10060A TO-220-2 CSD10060 CSD10060G TO-263-2 CSD10060 “The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006. This part number was released previously with Sn/Pb solder plating as a standard industry finish. For more information please contact power_sales@cree.com “ TO-263-2 TO-220-2 Note: Tj = Diode Junction Temperature In Degrees Celcius Diode Model