CS65-70B CENTRAL | Alldatasheet
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(SEE REVERSE SIDE) CS65-70B CS65-70D CS65-70M CS65-70N CS65-70P CS65-70PB SILICON CONTROLLED RECTIFIER
70 AMPS RMS, 200 THRU 1200 VOLTS
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS65-70B series types are High Power Silicon Controlled Rectifiers designed for phase control applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) CS65 CS65 CS65 CS65 CS65 CS65 SYMBOL -70B -70D -70M -70N -70P -70PB UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 200 400 600 800 1000 1200 V Peak Non-Repetitive Reverse Voltage V RSM 300 500 700 900 1100 1300 V RMS On-State Current (TC=102°C) I T(RMS) 63 A Average On-State Current (TC=102°C) I T(AV) 40 A Peak One Cycle Surge ( 60Hz) I TSM 1000 A I2t Value for Fusing (t=8.3ms) I 2t 4100 A 2s Peak Forward Gate Voltage V FGM 20 V Peak Reverse Gate Voltage V RGM 10 V Peak Gate Power P GM 10 W Average Gate Power (tp=10µs) P G(AV) 1.0 W Peak Gate Current I GM 3.0 A Critical Rate of Rise of On-State Current di/dt 200 A/µs Storage Temperature T stg -65 to +150 °C Junction Temperature T J -65 to +125 °C Thermal Resistance Θ J-C 0.35 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS M I N TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM, TC=125°C 6.0 mA IGT V D=12V, RL=33Ω 100 mA IH I T=500mA 200 mA VGT V D=12V, RL=33Ω 3 . 0 V VTM I TM=500A 3.0 V dv/dt V D=.67 x VDRM, TC=125°C 200 V/µs
CS65-70 SERIES SILCON CONTROLLED RECTIFIER MAXIMUM ON-STATE CHARACTE RISTICS 100 10 0 0 00 . 511 . 522 . 5 33 . 5 V TM, ON-STATE VOLTAGE (V) ITM, ON-STATE CURRENT (A T C = 12 5 °CT C = 2 5°C TO-65 PACKAGE - MECHANICAL OUTLINE F G A D J K L N M GATE CATHODE ANODE 1/4-28 UNF - 3A THREAD B C E H M I NM A XM I NM A X B 0.025 0.030 0.64 0.76 C - 0.770 - 19.56 D 0.677 0.685 17.20 17.40 E 0.120 - 3.05 - F 0.200 0.300 5.08 7.62 G (DIA) 0.145 0.155 3.68 3.93 H 0.065 0.085 1.65 2.15 J 1.200 1.250 30.48 31.75 K (DIA) 0.055 0.065 1.40 1.65 L 0.115 0.155 2.92 3.94 M - 0.515 - 13.08 N 0.427 0.447 10.84 11.35 TO-65 (REV: R1) DIMENSIONS SYMBOL INCHES MILLIMETERS