CS223M CENTRAL | Alldatasheet
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Technical content
0.8 AMP SILICON SCR
600 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223M type is an epoxy molded Silicon Controlled Rectifier designed for circuit sensing, detection and control applications including lamp drivers and small motor control MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 600 V RMS On-State Current (TC=60°C) I T(RMS) 0.8 A Peak One Cycle Surge, t=10ms I TSM 10 A I2t Value for Fusing, t=10ms I 2t 0.24 A 2s Peak Gate Power, tp=10μs P GM 2.0 W Average Gate Power Dissipation P G(AV) 0.1 W Peak Gate Current, tp=10μs I GM 1.0 A Peak Gate Voltage, tp=10μs V GM 8.0 V Operating Junction Temperature T J -40 to +125 °C Storage Temperature T stg -40 to +150 °C Thermal Resistance ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM, RGK=1KΩ 1.0 μA IDRM, IRRM Rated V DRM, VRRM, RGK=1KΩ, TC=125°C 100 μA IGT V D=12V 20 200 μA IH R GK=1KΩ 0.25 5.0 mA VGT V D=12V 0.61 0.8 V VTM I TM=1.0A, tp=380μs 1.2 1.7 V dv/dt V D= 2/3 VDRM, RGK=1KΩ, TC=125°C 25 V/μs SOT-223 CASE R1 (12-February 2010) www.centralsemi.com
LEAD CODE: 1) Gate 2) Anode 3) Cathode 4) Anode MARKING: FULL PART NUMBER SOT-223 CASE - MECHANICAL OUTLINE www.centralsemi.com R1 (12-February 2010)