CS220-10B CENTRAL | Alldatasheet
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SILICON CONTROLLED RECTIFIERS
10 AMP, 200 THRU 800 VOLT
DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-10B series types are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CS220 SYMBOL -10B -10D -10M -10N UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 200 400 600 800 V RMS On-State Current (TC=90°C) I T(RMS) 10 A Peak One Cycle Surge Current, t=10ms I TSM 100 A I 2t Value for Fusing, t=10ms I 2t 50 A 2s Peak Gate Power Dissipation, tp=10μs P GM 40 W Average Gate Power Dissipation P G(AV) 1.0 W Peak Forward Gate Current, tp=10μs I FGM 4.0 A Peak Forward Gate Voltage, tp=10μs V FGM 16 V Peak Reverse Gate Voltage, tp=10μs V RGM 5.0 V Critical Rate of Rise of On-State Current di/dt 50 A/μs Operating Junction Temperature T J -40 to +125 °C Storage Temperature T stg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 2.5 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IDRM, IRRM Rated V DRM, VRRM 10 μA IDRM, IRRM Rated V DRM, VRRM, TC=125°C 2.0 mA IGT V D=12V, RL=33Ω 15 mA IH I T=100mA 30 mA VGT V D=12V, RL=33Ω 1.5 V VTM I TM=20A, tp=10ms 1.6 V dv/dt V D=⅔Rated VDRM, TC=125°C 200 V/μs TO-220 CASE R1 (24-October 2013) www.centralsemi.com
SILICON CONTROLLED RECTIFIERS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS www.centralsemi.com R1 (24-October 2013)