CR5AS

CR5AS MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR5AS APPLICATION Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for autocycle, electric tools, other general purpose control applications, strobe flasher Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage]1 DC off-state voltage ]1 Voltage class Unit V V V V V MAXIMUM RATINGS 400 500 320 400 320 600 720 480 600 480 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, T c=88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A W W V V A g Ratings 7.8 0.5 0.1 0.3 –40 ~ +125 –40 ~ +125 0.26 ]1. With Gate-to-cathode resistance RGK =220Ω 6.5 5.0±0.2 2.3 2.3 0.9 MAX 1.0 5.5±0.2 2.3

10 MAX

0.5±0.1 0.5±0.2 0.8 1.5±0.2

1.0 MAX

2.3 MIN

∗ Measurement point of case temperature OUTLINE DRAWING Dimensions in mm MP-3 1/CR 2/CR 3/CR CATHODE ANODE GATE ANODE

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ]2. The method point for case temperature is at anode tab. ]3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BD) The above values do not include the current flowing through the 220Ω resistance between the gate and cathode. B 20 ~ 50 Item IGT (µA) A 1 ~ 30 C 40 ~ 100 D 80 ~ 200

ELECTRICAL CHARACTERISTICS

Tj=125°C, VRRM applied, RGK =220Ω Tj=125°C, VDRM applied, RGK =220Ω Tc=25°C, ITM =15A, instantaneous value Tj=25°C, VD=6V, IT=0.1A Tj=125°C, VD=1/2VDRM , RGK =220Ω Tj=25°C, VD=6V, IT=0.1A Tj=25°C, VD=12V, RGK =220Ω Junction to case ]2 Unit mA mA V V V µA mA °C/W Typ. 3.5 Symbol I RRM IDRM VTM VGT VGD IGT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Limits Min. 0.1 Max. 2.0 2.0 1.8 0.8 200 ] 3 3.0 100 23 5 7 1 0 1 23 5 7 1 0 244 100 102 101 100 10–1 Tc = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 102 100 10–1 101 100 5 23 57 10123 57 10223 57 2310–1 VFGM = 6V VGT = 0.8V IGT = 200µA (Tj = 25°C) PGM = 0.5W PG(AV) = 0.1W VGD = 0.1V IFGM = 0.3A 0 80 246 7135 θ 360° θ = 30° 60° 120°90° 180° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE VOLTAGE (V) GATE CURRENT (mA) 23100 571 01 23 57 1 02 23 57 1 03 101 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 103 102 100 JUNCTION TO AMBIENT JUNCTION TO CASE ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) 160 120 140 100 0 80 246 7135 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30° 60° 120° 90° 180° GATE CHARACTERISTICS 120 14060–20–40–60 0 20 40 80 100 103 102 101 100 TYPICAL EXAMPLE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C) # 1 # 2 # 1 @11µA # 2 @61µA IGT (25°C) R L = 60Ω VD = 6V 1.0 0.8 0.7 0.6 0.3 0.4 0.1 120 140–40–60 –20 20 80 0.2 0.5 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) Tj = 25°C

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 0 80 246 7135 θ = 30° 60° 120°90° 180° θ θ 360° RESISTIVE LOADS 160 120 140 100 0 1.60 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION WITHOUT FIN 160 120 140 100 0 1.60 θ = 30° 60° 120° 90° 180° θ θ 360° WITHOUT FIN RESISTIVE LOADS NATURAL CONVECTION 160 120 140 100 0 80 246 7135 θ = 30° 60° 90° θ θ 360° 120°180° RESISTIVE LOADS ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) 160 120 140 100 0 80 246 7135 80 80 t2.3 θ = 30° 60° 120° 180° 90° θ θ 360° RESISTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD 160 120 140 100 0 80 246 7135 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD 80 80 t2.3 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE –40–20 0 20 40 60 80 100120140160 160 100 120 140 TYPICAL EXAMPLE –40–20 0 20 40 60 80 100120140160 160 100 120 140 R GK = 220ΩTYPICAL EXAMPLE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) 23100 571 01 23 57 1 02 23 57 1 03 160 120 140 100 Tj = 125°C R GK = 220Ω TYPICAL EXAMPLE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (T j = t°C) REPETITIVE PEAK REVERSE VOLTAGE (T j = 25°C) 23 5 7 1 0-1 23 57 1 00 23 5 7 1 01 102 101 103 100

7 TYPICAL EXAMPLE

Tj = 125°C BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE ( Ω ) 100 (%)BREAKOVER VOLTAGE (R GK = rΩ ) BREAKOVER VOLTAGE (R GK = 220Ω ) 60–20–40–60 0 20 40 80 100120 140 10–1 100 101 DISTRIBUTION HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE I GT (25°C)= 35µA VD = 12V R GK = 220Ω 23 5 7 1 0-1 23 5 7 1 00 23 5 7 1 01 400 100 150 200 250 300 350 HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)HOLDING CURRENT (R GK = rΩ ) HOLDING CURRENT (R GK = 220Ω ) # 1 14µA 1.7mA # 2 48µA 2.7mA IGT (25°C) IH (1K) TYPICAL EXAMPLE Tj = 25°C # 1 # 2

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 102 23100 544 71 01 23 57 1 0 2 104 103 101 TYPICAL EXAMPLE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) # 1 11µA # 2 61µA IGT (DC) Ta = 25°C R L = 60Ω VD = 6V # 1 # 2