CR3PM

CR3PM MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR3PM APPLICATION TV sets, control of household equipment such as electric blankets, other general purpose control

applications

]1. With gate to cathode resistance RGK =220Ω .

• UL Recognized: File No. E80276 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine half wave, 180° conduction, T c=103°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta=25°C, AC 1 minute, each terminal to case Unit A A A A2s W W V V A g V Ratings 4.7 3.0 24.5 0.5 0.1 0.3 –40 ~ +125 –40 ~ +125 2.0 1500 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage]1 DC off-state voltage ]1 Voltage class Unit V V V V V MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) 400 500 320 400 320 600 720 480 600 480 OUTLINE DRAWING Dimensions in mm TO-220F TYPE NAME VOLTAGE CLASS φ3.2±0.2

1.3 MAX

0.8 2.54

13.5 MIN

3.6 5.0 1.2 8.5

10.5 MAX

5.2 4.5231 1/CR 2/CR CATHODE ANODE GATE 2.54 2.8 0.5 2.6 ∗ Measurement point of case temperature

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Symbol IRRM IDRM VTM VGT VGD IGT R th (j-c) Test conditions Tj=125°C, VRRM applied, RGK =220Ω Tj=125°C, VDRM applied, RGK =220Ω Tc=25°C, ITM =10A, instantaneous value Tj=25°C, VD=6V, IT=0.1A Tj=125°C, VD=1/2VDRM , RGK =220Ω Tj=25°C, VD=6V, IT=0.1A Junction to case ]2 Unit mA mA V V V µA °C/W Typ. Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Limits Min. 0.1 Max. 2.0 2.0 1.6 0.8 100 ] 3 4.1

ELECTRICAL CHARACTERISTICS

10–1 Tc = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES ]2. The contact thermal resistance Rth (c-f) is 0.5°C/W with greased. ]3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) B 20 ~ 50 C 40 ~ 100 Item IGT (µA) A 1 ~ 30 The above values do not include the current flowing through the 220Ω resistance between the gate and cathode.

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 100 57 1 0023 57 1 0123 57 1 0223 2310–1 10–1 101 102

2 VFGM = 6V

VGT = 0.8V IGT = 200µA (Tj = 25°C) IFGM = 0.3A PGM = 0.5W VGD = 0.1V PG(AV) = 0.1W 23100 571 01 23 57 1 02 23 57 1 03 100 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 102 101 10–1 12060–20–40 0 20 40 80 100 103 102 101 100 # 2 # 1 IGT (25°C) # 1 45µA # 2 18µA TYPICAL EXAMPLE 1.0 0.7 0.6 0.3 0.2 0 120–40 –20 20 80 0.1 0.5 0.4 0.8 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION 0 5.00 1.0 4.02.0 3.0 θ 360° θ = 30°60° 120° 90° 180° RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 5.00 1.0 4.02.0 3.0 θ = 30° 120°60° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE CHARACTERISTICS 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE –40–20 0 20 40 60 80 100120140160 160 100 120 140 R GK = 220Ω TYPICAL EXAMPLE 16060–20–40 0 20 40 80 100120140 102 101 100 10–1 VD = 12V R GK = 1kΩ TYPICAL EXAMPLE DISTRIBUTION 160 120 140 100 0 1.60 θ 360° θ = 180° 90° 120° 60° 30° NATURAL CONVECTION WITHOUT FIN RESISTIVE, INDUCTIVE LOADS 0 5.00 4.01.0 2.0 3.0 θ θ 360° RESISTIVE LOADS θ = 30° 60° 90° 180° 120° 160 120 140 100 0 5.00 4.01.0 2.0 3.0 θ θ 360° RESISTIVE LOADS 160 120 140 100 0 1.60 θ θ 360° RESISTIVE LOADS NATURAL CONVECTION WITHOUT FIN θ = 180° 90° 120° 60° 30° ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 10–1 101 100 23 5 7 1 0 1 100 23 5 7 1 0 2 VD = 100V Ta = 25°C TYPICAL EXAMPLE I GT (25°C) # 33µA 102 23100 571 01 23 57 1 02 23 57 1 03 104 103 101 0.1s twTYPICAL EXAMPLE –40–20 0 20 40 60 80 100120140160 160 100 120 140 TYPICAL EXAMPLE 2310–1 571 00 23 57 1 01 23 57 1 02 400 200 250 300 350 100 150 # 2 # 1 IGT (25°C) # 1 25µA # 2 50µA TYPICAL EXAMPLE 0 1600 40 80 120 14020 60 100 IT = 2A VD = 50V, VR = 50V dv/dt = 5V/µs /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, TYPICAL EXAMPLE DISTRIBUTION HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)HOLDING CURRENT (R GK = rkΩ ) HOLDING CURRENT (R GK = 1kΩ ) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) TURN-ON TIME VS. GATE CURRENT TURN-ON TIME (µs) GATE CURRENT (mA) TURN-OFF TIME VS. JUNCTION TEMPERATURE TURN-OFF TIME (µs) JUNCTION TEMPERATURE (°C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (T j = t°C) REPETITIVE PEAK REVERSE VOLTAGE (T j = 25°C)