CR3EM

CR3EM MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR3EM APPLICATION Automatic strobe flasher Symbol VRRM VRSM VR (DC) VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class Unit V V V V V 400 500 320 400 600 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, T a=43°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A W W V V A g Ratings 0.94 0.6 2.0 0.2 –40 ~ +125 –40 ~ +125 1.1 MAXIMUM RATINGS TYPE NAME VOLTAGE CLASS 231 1.0±0.5

8 MAX

1.2±0.1

4 MAX

12 MIN

0.8 0.8 2.5 2.5

1.5 MIN

10 MAX

4.5 MAX

1.55±0.1 0.5 OUTLINE DRAWING Dimensions in mm TO-202 1/CR 2/CR 3/CR /CR CATHODE ANODE GATE

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

R th (j-a) Test conditions Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tc=25°C, ITM =10A, instantaneous value Tj=25°C, VD=6V, IT=0.5A Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, IT=0.5A Tj=25°C, VD=12V Junction to ambient Unit mA mA V V V mA mA °C/W Typ. Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Limits Min. 0.2 Max. 0.1 0.1 1.6 1.5 120 102 101 100 10–1 Tc = 25°C 100 23 5 7 1 0 1 23 5 7 1 0 244 100 MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 10–1 101 101 23 5 7 1 0 2 100 23 5 7 1 0 3 VFGM = 6V PGM = 2W VGD = 1.5V PG(AV) = 0.2W IGT = 30mA (Tj = 25°C) 23100 571 01 23 57 1 02 23 57 1 03 100 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 102 16012014060–20–40 0 20 40 80 100101 103 102 TYPICAL EXAMPLE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 160–40 –20 20 8006 0 40 100120140 TYPICAL EXAMPLE DISTRIBUTION 160 120 140 100 0 1.60 θ = 30° 120° 60° 90° 180° WITHOUT FIN θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0 5.00 1.0 4.02.0 3.0 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30°60° 120° 90° 180° MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE CHARACTERISTICS GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 16012014060–20–40 0 20 40 80 100101 103 102 TYPICAL EXAMPLE 160 120 140 100 0 1.60 θ = 30° 120° 60° 90° 180° WITHOUT FIN θ θ 360° RESISTIVE LOADS NATURAL CONVECTION 0 5.00 1.0 4.02.0 3.0 θ = 30° 60° 120° 90° 180° θ θ 360° RESISTIVE LOADS 160 140 120 100 0 160–40 –20 20 8006 0 40 100120140 TYPICAL EXAMPLE 23101 571 02 23 57 1 03 23 57 1 04 160 100 120 140 VD = 12V Ta = 25°C 23100 571 01 23 57 1 02 23 57 1 03 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE HOLDING CURRENT (mA) GATE TO CATHODE RESISTANCE (k Ω ) HOLDING CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)HOLDING CURRENT (T j = t°C) HOLDING CURRENT (T j = 25°C) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) GATE TRIGGER CURRENT (mA)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 23100 571 01 23 57 1 02 23 57 1 03 160 140 120 100 0 160–40 –20 20 8006 0 40 100120140 TYPICAL EXAMPLE 102 23100 571 01 23 57 1 02 23 57 1 03 104 103 101 0.1s twTYPICAL EXAMPLE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) TURN-OFF TIME VS. GATE TRIGGER CURRENT TURN-OFF TIME (µs) GATE TRIGGER CURRENT (mA)