CR3AMZ MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR3AMZ APPLICATION Automatic strobe flasher ]1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Symbol IT (AV) ITRM PGM PG (AV) VFGM IFGM Tj Tstg Parameter Average on-state current Repetitive peak on-state current ]1 Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, C M =700µF with discharge current Typical value Unit A A W W V A g Ratings 0.4 200 0.5 0.1 0.5 –40 ~ +125 –40 ~ +125 1.1 Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class Unit V V V V 400 480 400 480 MAXIMUM RATINGS TYPE NAME VOLTAGE CLASS 231 1.0±0.5

8 MAX

1.2±0.1

4 MAX

12 MIN

0.8 0.8 2.5 2.5

1.5 MIN

10 MAX

4.5 MAX

1.55±0.1 0.5 OUTLINE DRAWING Dimensions in mm TO-202 1/CR 2/CR 3/CR /CR CATHODE ANODE GATE

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Symbol IRRM IDRM VTM VGT VGD IGT C c Test conditions Tj=25°C, VRRM applied Tj=25°C, VDRM applied Ta=25°C, ITM =3A, Instantaneous value Tj=25°C, VD =6V, RL=6Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD =6V, RL=6Ω CM =700µF, VCM =350V, ITM =200A, L=25µH, Ta=25°C Unit mA mA V V V mA µF Typ. Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Commutating capacitor Min. 0.1 Max. 0.1 0.1 2.0 1.5 2.2 Limits

ELECTRICAL CHARACTERISTICS

]2. Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. C C 0.047µ470Ω470Ω 10kΩ L IT VCM C M CR3AMZ-810Ω 0.1µ 15kΩ C M = 700µF VCM = 350V ITM = 200A L = 25µH Ta = 25°C CONDUCTION TIME : arbitarity Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR 1002 8 46 917 35 103 102 101 100 Ta = 25°C 10–1 23100 571 01 23 57 1 02 23 57 1 03 101 100 10–2 VFGM = 6V VGT = 1.5V IGT = 30mA (Tj = 25°C) PGM = 0.5W VGD = 0.1V IFGM = 0.5A PG(AV) = 0.1W MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) GATE CHARACTERISTICS GATE VOLTAGE (V) GATE CURRENT (mA) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 2.5 2.2 1.8 1.7 1.6 2.3 2.4 2.1 1.9 2.0 200100 120 180140 160 1.5 VCM = 350V C M = 700µF L = 25µH T a = 25°C SEE FIG.1 1000 700 300 200 100 800 900 600 400 500 220120 140 200160 180 C C =1.7µF C C =1.8µF C C =1.9µF C C =2.0µF C C =2.1µF C C =2.3µF VCM = 350V Ta = 25°C L = 25µH SEE FIG.1 C C =2.2µF 180 150 110 100 160 170 140 120 130 1000 20 80 40 60 9010 70 30 5080 VCM = 350V ITM = 200A C M = 700µF L = 25µH TYPICAL EXAMPLE 102 23100 571 01 23 57 1 02 23 57 1 03 104 103 101 IG tw TYPICAL EXAMPLE 101 103 – 2 0 – 1 00 1 02 03 04 05 06 07 08 0 102 TYPICAL EXAMPLE 1.0 0.7 0.3 0.2 0.1 0.8 0.9 0.6 0.4 0.5 0 80–20 0 3 05 07 0 60–10 10 20 40 TYPICAL EXAMPLE GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) COMMUTATING CHARACTERISTICS MAIN CAPACITOR (µF) PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR VS. PEAK ON-STATE CURRENT COMMUTATING CAPACITOR (µF) PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE AMBIENT TEMPERATURE (°C) 100 (%)COMMUTATING CAPACITOR (Ta = t°C) COMMUTATING CAPACITOR (Ta = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 14040–40–60 –20 0 20 60 80 100120 103 102 101 100 VD = 12V R GK = 1kΩ 14040–40–60 –20 0 20 60 80 100120 103 102 101 /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, VD = 400V R GK = 1kΩ 14040–40–60 –20 0 20 60 80 100120 103 102 101 /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/, VR = 400V R GK = 1kΩ 200 140 160 180 120 100 0 140–60 –20 40 80 120 100–40 0 20 60 R GK = 1kΩTYPICAL EXAMPLE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE PEAK OFF-STATE CURRENT (µA) JUNCTION TEMPERATURE (°C) PEAK REVERSE CURRENT VS. JUNCTION TEMPERATURE PEAK REVERSE CURRENT (µA) JUNCTION TEMPERATURE (°C)