CR250-2

CR250-2 CENTRAL | Alldatasheet

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Technical content

MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL CR250-2 CR250-3 CR250-4 UNITS DC Blocking Voltage V R 2000 3000 4000 V Peak Repetitive Reverse Voltage V RRM 2000 3000 4000 V RMS Reverse Voltage V R(RMS) 1400 2100 2800 V Average Forward Current (TA=50°C) I O 200 mA Peak Forward Surge Current (t=8.3ms) I FSM 30 A Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IR V R=Rated VRRM 5.0 μA IR V R=Rated VRRM, TA=100°C 50 μA VF I R=200mA (CR250-2) 3.0 V VF I R=200mA (CR250-3) 4.0 V VF I R=200mA (CR250-4) 5.0 V CJ V R=4.0V, f=1.0MHz 30 pF CR250-2 SERIES HIGH VOLTAGE SILICON RECTIFER

2000 THRU 4000 VOLTS

Semiconductor Corp. TM R2 (30-September 2009) DESCRIPTION: The CENTRAL SEMICONDUCTOR CR250-2 series types are 200mA axial lead high voltage silicon rectifiers designed for general purpose high voltage applications. MARKING: FULL PART NUMBER

Semiconductor Corp. TM DO-15 CASE - MECHANICAL OUTLINE CR250-2 SERIES HIGH VOLTAGE SILICON RECTIFER R2 (30-September 2009) MARKING: FULL PART NUMBER