CR20EY

CR20EY MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20EY APPLICATION Inverter, DC choppers, pulse generator MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Unit V V V V 400 480 400 480 600 720 600 720 800 850 800 800 Voltage class Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Conditions Commercial frequency, sine half wave, 180° conduction, T c=74°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VD=1/2VDRM , ITM =60A, IG =0.1A, Tj=25°C, f=60Hz Typical value Unit A A A A2s A/µs W W V V A kg·cm N·m g Ratings 31.5 300 380 100 5.0 0.5 –30 ~ +125 –30 ~ +125 2.94 LOCK WASHER NUT (22) φ3.5 1.6 φ1.5 φ14 3.5 TYPE NAME 32.1 25.5 4.4 M6 ×1 Note: Mica washer and spacer are provided only upon request. SOLDERLESS TERMINAL TELEGRAPH WIRE 2.63~6.64mm2 OUTLINE DRAWING Dimensions in mm 1/CR 2/CR CATHODE ANODE GATE

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Test conditions Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tc=25°C, ITM =60A, Instantaneous value Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, IT=0.5A Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, IT=0.5A Tj=25°C, VD =100V, IT=15A, IG =0.1A IT=20A, VR =50V, VD =1/2VDRM , Tj=125°C, dv/dt=20V/µs Junction to case Case to fin, greased Unit mA mA V V/µs V V mA µs µs °C/W °C/W Typ. Symbol I RRM IDRM VTM dv/dt VGT VGD IGT tgt tq R th (j-c) R th (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Turn-on time Turn-off time Thermal resistance Contact thermal resistance Limits Min. 100 0.25 Max. 6.0 6.0 2.5 3.0 1.0 0.40

ELECTRICAL CHARACTERISTICS

1.5 2.0 25°C Tc = 125°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 1.0 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 10–1 23101 571 02 23 57 1 03 23 57 1 04 101 100 VGT = 3V PGM = 5W VGD = 0.25V VFGM = 10V IFGM = 2A PG(AV) = 0.5WIGT Tj = 125°C 25°C 30°C 23100 571 01 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE CHARACTERISTICS GATE VOLTAGE (V) GATE CURRENT (mA) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) 0 32164 8 12 20 24 28 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS 0 320 164 8 12 20 24 28 θ = 30° 60° 120° 90° 180° θ θ 360° RESISTIVE LOADS 160 120 140 100 0 32164 8 12 20 24 28 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30° 60° 120°90° 180° 201020 4 6 8 1 21 41 61 8 160 120 100 140 θ = 180° 90° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION BX40-06 FIN 120 120 t3 ALUMINUM PLATE PAINTED BLACK AND GREASED

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 00 20 40 60 120 16080 100 100 140 IT = 20A, tw = 50µs VR = 50V, VD = 300V dv/dt = 20V/µs TYPICAL EXAMPLE 164 8 12 20 24 28 32 DC θ = 30° 120° 90° θ 360° 60° 180°270° RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 164 8 12 20 24 28 32 θ θ 360° θ = 30° 60° 120°90° 180° RESISTIVE LOADS 160 120 140 100 0 164 8 12 20 24 28 32 θ θ 360° θ = 180° θ = 90° RESISTIVE LOADS NATURAL CONVECTION BX40-06 FIN 120 120 t3 ALUMINUM PLATE PAINTED BLACK AND GREASED ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) 160 120 140 100 0 164 8 12 20 24 28 32 DC θ 360° θ = 30°60° 120° 180° 270°90° RESISTIVE, INDUCTIVE LOADS TURN-OFF TIME VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)TURN-OFF TIME (Tj=t°C) TURN-OFF TIME (Tj=125°C) 160 120 140 100 0 164 8 12 20 24 28 32 90° DC θ = 180° BX40-06 FIN 120 120 t3 ALUMINUM PLATE PAINTED BLACK AND GREASED θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 00 48 12 24 3216 20 100 120 140 160 180 200 Tj = 125°C VR = 50V di/dt = 20V/µs V D = 1/2VDRM TYPICAL EXAMPLE 0 –20 0 20 80 12040 60 100 120 140 160 180 200 100 TYPICAL EXAMPLE GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE TURN-OFF TIME VS. ON-STATE CURRENT ON-STATE CURRENT (A) 100 (%)TURN-OFF TIME (IT = iA) TURN-OFF TIME (IT = 20A ) GATE TRIGGER CURRENT ·VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT ·VOLTAGE (T j = t°C) GATE TRIGGER CURRENT ·VOLTAGE (T j = 25°C)