BCR16A MITSUBISHI | Alldatasheet
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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE BCR16A, BCR16B, BCR16C, BCR16E APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Conditions Unit A A A W W V A Ratings 170 121 0.5 –20 ~ +125 ]1. Gate open. Commercial frequency, sine full wave, 360° conduction BCR16A, B, C BCR16E Tc=99°C Tb=71°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class Unit V V MAXIMUM RATINGS 400 600 500 700 φ2.0 MIN
3 MAX
φ8.7 MAX φ2.0 MIN
6.5 MAX
19 MAX
14 MAX
φ11.1 MAX 1/CR 2/CR 3/CR /CR T
1 TERMINAL
Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM RATINGS (continue) Test conditions BCR16A BCR16B BCR16C BCR16E BCR16A only, 10 sec. BCR16C only (Typical value) BCR16E only, T a=25°C, AC 1 minute, T2 Terminal to base Symbol Tstg Viso Parameter Storage temperature Weight (Typical value) Soldering temperature Mounting torque Isolated voltage Ratings –20 ~ +125 3.0 8.5 8.5 9.5 230 2.94 1500 Unit g kg·cm N·m V Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) R th (j-b) (dv/dt)c Test conditions Tj=125°C, VDRM applied Tc=25°C, Tb=25°C (BCR16E only), ITM =25A , Instantaneous measurement Tj=25°C, VD =6V, RL=6Ω , RG =330Ω Tj=25°C, VD =6V, RL=6Ω , RG =330Ω Tj=125°C, VD=1/2VDRM Junction to case (BCR16A, BCR16B, BCR16C) Junction to base (BCR16E) Unit mA V V V V mA mA mA V °C/W °C/W V/µs Typ. Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Gate trigger current ]2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage ]2. Measurement using the gate trigger characteristics measurement circuit. ]3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
ELECTRICAL CHARACTERISTICS
(V) 400 500 Min. Commutating voltage and current waveforms (inductive load) (dv/dt) c Symbol R L R L Unit V/µs 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutat- ing current (di/dt) c=–8A/ms 3. Peak off-state voltage VD =400V Limits Min. 0.2 Max. 3.0 1.6 1.5 1.5 1.5 1.2 2.5 SUPPLY VOLTAGE TIME TIME TIME MAIN CURRENT MAIN VOLTAGE (di/dt)c VD(dv/dt)c
Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE 100 23 5 7 1 0 1 23 5 7 1 0 244 120 160 200 100 140 180 103 102 101 100 TC = 25°C Tb = 25°C 100 23101 571 02 23 57 1 03 23 57 1 04 101 10–1 VGD = 0.2V PGM = 5.0W PG(AV) = 0.5WVGM = 10V VGT = 1.5V IGM = 2A IFGT I, IRGT I, IRGT III MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS GATE VOLTAGE (V) GATE CURRENT (mA) 200 160 120 180 140 100 0 16060–20–40 0 20 40 80 100120140 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE GATE TRIGGER CURRENT ·VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT • VOLTAGE (Tj = t°C) GATE TRIGGER CURRENT • VOLTAGE (Tj = 25°C) PERFORMANCE CURVES
5.3 MAX
(φ16) 23±0.2 φ33 MAX 2-φ3.2 MIN
20 MAX
21 MAX
/CR T OUTLINE DRAWING Dimensions in mm BCR16B BCR16E BCR16C (16.2)
31.9 MAX
10 MAX
φ2.0 MIN M6 × 1.0 φ8.7 MAX
3 MIN
φ8.7 MAX
1.8 MAX
2-φ3.2 MIN 23±0.2
33 MAX
φ2.0 MIN
15.5 MAX
8 MAX
20.5 MAX
16 MAX
8.5 MAX
φ2.5 MIN φ2.0 MIN 3 φ8.7 MAX 1.8 MAX
22 MAX
φ2.0 MIN
Feb.1999 2310–1 571 00 23 5 23102 571 03 71 01 23 57 1 02 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2310–1 571 00 23 57 1 01 23 57 1 02 2.4 2.0 1.6 1.2 0.8 0.4 2.8 3.2 2310 2 571 03 23 57 1 04 23 57 1 05 160 120 100 0 200 2 6 10 14 16 18 140 48 1 2 80 80 t2.0 160 160 t4.0 120 120 t3.0 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE 0 200 2 6 10 14 16 18 48 1 2 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 160 120 100 0 200 2 6 10 14 16 18 140 48 1 2 BCR16A, BCR16B, BCR16C BCR16E CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 160 120 100 0 200 2 6 10 14 16 18 140 48 1 2 80 80 t2.0 160 160 t4.0 120 120 t3.0 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CASE TEMPERATURE (°C) RMS ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR16E) TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR16A, B, C) TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLES AT 60Hz) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16A) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16B) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16C) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16E) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) 160 120 100 0 200 2 6 10 14 16 18 140 48 1 2 80 80 t2.0 160 160 t4.0 120 120 t3.0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 160 120 100 0 200 2 6 10 14 16 18 140 48 1 2 80 80 t2.0 160 160 t4.0 120 120 t3.0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE : MOUNTING ON FIN WITH GREASE : MICA PLATE WITH GREASE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED NATURAL CONVECTION 6Ω 6Ω 6V 6V R G R G R G A V A V A V TEST PROCEDURE 1 TEST PROCEDURE 3 TEST PROCEDURE 2 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS