CR05AS

CR05AS MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage]1 DC off-state voltage ]1 Voltage class Unit V V V V V MAXIMUM RATINGS 4 (marked “CB”) 200 300 160 200 160 8 (marked “CD”) 400 500 320 400 320 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, T a=57°C ]2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A W W V V A mg Ratings 0.79 0.5 0.4 0.1 0.01 0.1 –40 ~ +125 –40 ~ +125 ]1. With Gate-to-cathode resistance RGK =1kΩ 1/CR 2/CR T

1 TERMINAL

4.4±0.1 1.5±0.11.6±0.2 0.4±0.07

0.8 MIN

2.5±0.1 3.9±0.3 0.4+0.03 –0.05 1 2 3 (Back side) OUTLINE DRAWING Dimensions in mm SOT-89 0.5±0.07 1.5±0.1 1.5±0.1

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ]2. Soldering with ceramic plate (25mm × 25mm × t0.7). ]3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. B 20 ~ 50 Item IGT (µA) A 1 ~ 30 C 40 ~ 100

ELECTRICAL CHARACTERISTICS

Tj=125°C, VRRM applied Tj=125°C, VDRM applied, RGK =1kΩ Ta=25°C, ITM =1.5A, instantaneous value Ta=25°C, VD =6V, IT=0.1A ]4 Tj=125°C, VD=1/2VDRM , RGK =1kΩ Tj=25°C, VD =6V, IT=0.1A ]4 Tj=25°C, VD=12V, RGK =1kΩ Junction to ambient ]2 Unit mA mA V V V µA mA °C/W Typ. Symbol I RRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Limits Min. 0.2 Max. 0.1 0.1 1.9 0.8 100 ] 3 DC IGS IGT DC 60Ω VGT TUT 1kΩ R GK A3 A2 SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ ) ]4. IGT , VGT measurement circuit. SWITCH 100 23 5 7 1 0 1 23 5 7 1 0 244 501 4 23 102 101 100 10–1 Ta = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 102 10–2 100 101 101 10–1 100 10–223 57 23 5710–1 10223 57 23 57 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.1W PG(AV) = 0.01W VGD = 0.2V IFGM = 0.1A 200 160 140 120 0 160–40 –20 20 80 140 120 100 180 06 0 40 100 # 1 # 2 IGT (25°C) # 1 32µA # 2 9µA TYPICAL EXAMPLE 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160–40 –20 20 80 140 120 0.2 0.5 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION 1.5 0.5 1.0 θ 360° θ = 30°60°90° 180° 120° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE VOLTAGE (V) GATE CURRENT (mA) GATE CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE CURRENT (Tj = t°C) GATE CURRENT (Tj = 25°C) 23100 571 01 23 57 1 02 23 57 1 03 101 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 103 102 100 ALUMINUM BOARD WITH SOLDERING 25 25 t0.7 See ∗3 GATE CHARACTERISTICS 60–20–40–60 0 20 40 80 100 120140 103 102 101 100 TYPICAL EXAMPLE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 1.5 1.0 0.5 0 0.80 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30°60° 120° 90°180° 270° DC 1.5 1.0 0.5 0 0.80 θ = 30°60° 120° 90° 180° θ θ 360° RESISTIVE LOADS 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 R GK = 1kΩ TYPICAL EXAMPLE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) 160 120 140 100 0 0.80 0.2 0.4 0.6 θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD WITH SOLDERING 25 25 t0.7 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 0.80 0.2 0.4 0.6 θ θ 360° RESISTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD WITH SOLDERING 25 25 t0.7 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 0.80 0.2 0.4 0.6 θ = 30° 120° 180° DC 270°60° 90° θ 360° RESISTIVE, INDUCTIVE LOADS ALUMINUM BOARD WITH SOLDERING 25 25 ± t0.7 NATURAL CONVECTION

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 160 120 100 0 160–40–20 20 80 140 120 140 06 0 40 100 TYPICAL EXAMPLE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (T j = t°C) REPETITIVE PEAK REVERSE VOLTAGE (T j = 25°C) 2310–1 57 1 00 23 5 7 1 01 23 5 7 1 02 120 100 Tj = 125°C TYPICAL EXAMPLE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)BREAKOVER VOLTAGE (R GK = rkΩ ) BREAKOVER VOLTAGE (R GK = 1kΩ ) 23100 57 1 01 23 57 1 02 23 57 1 03 120 100 # 1 # 2 TYPICAL EXAMPLE # 1 IGT (25°C)= 10µA # 2 IGT (25°C)= 66µA Tj = 125°C, RGK = 1kΩ BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) 60–20–40–60 0 20 40 80 100120140 102 101 100 10–1 TYPICAL EXAMPLE DISTRIBUTION HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) Tj = 25°C IH (25°C) = 1mA IGT (25°C) = 25µA 2310–1 571 00 23 5 7 1 01 23 5 7 1 02 500 200 300 400 100 # 1 # 2 HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)HOLDING CURRENT (R GK = rkΩ ) HOLDING CURRENT (R GK = 1kΩ ) # 1 13µA 1.6mA # 2 59µA 1.8mA TYPICAL EXAMPLE IH (1kΩ )IGT (25°C) Tj = 25°C 102 223100 45 71 0 1 34 5 7 102 103 101 # 1 # 2 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) TYPICAL EXAMPLE IGT (25°C) # 1 10µA # 2 66µA Tj = 25°C