CR04

CR04AM MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE CR04AM APPLICATION Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage]1 DC off-state voltage ]1 Voltage class Unit V V V V V MAXIMUM RATINGS 400 500 320 400 320 600 720 480 600 480 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, T a=54°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A W W V V A g Ratings 0.63 0.4 0.4 0.5 0.1 0.3 –40 ~ +125 –40 ~ +125 0.23 ]1. With Gate-to-cathode resistance RGK =1kΩ TYPE NAME VOLTAGE CLASS2 1/CR 2/CR T

1 TERMINAL

φ5.0 MAX 4.4 5.0 MAX12.5 MIN

3.9 MAX

1.3 1.25 1.25CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Tj=125°C, VRRM applied Tj=125°C, VDRM applied, RGK =1kΩ Ta=25°C, ITM =1.2A, instantaneous value Ta=25°C, VD =6V, IT=0.1A ]3 Tj=125°C, VD=1/2VDRM , RGK =1kΩ Tj=25°C, VD =6V, IT=0.1A ]3 Tj=25°C, VD=12V, RGK =1kΩ Junction to ambient Unit mA mA V V V µA mA °C/W Typ. 1.5 Symbol I RRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance ]2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) B 20 ~ 50 C 40 ~ 100 Item IGT (µA) A 1 ~ 30 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. Limits Min. 0.2 Max. 0.5 0.5 1.2 0.8 100 ] 2 150 DC IGS IGT DC 60Ω VGT TUT 1kΩ R GK A3 A2 SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ ) ]3. IGT , VGT measurement circuit. SWITCH 100 23 5 7 1 0 1 23 5 7 1 0 244 501 4 23 102 101 100 10–1 Ta = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE 102 10–2 100 101 10–1 100 10–223 57 23 57 10123 57 10223 57 2310–1 VFGM = 6V VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) PGM = 0.5W PG(AV) = 0.1W VGD = 0.2V IFGM = 0.3V 23100 571 01 23 57 1 02 23 57 1 03 101 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 103 102 100 16060–20–40 0 20 40 80 100120140 103 102 101 100 TYPICAL EXAMPLE 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120–40 –20 20 80 0.2 0.5 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION 160 120 140 100 0 0.80 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.80 θ 360° θ = 30° 60° 120° 90° 180° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE CHARACTERISTICS 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 R GK = 1kΩ TYPICAL EXAMPLE 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.80 θ = 30° 60° 120° 90° 180° θ θ 360° RESISTIVE LOADS 160 120 140 100 0 0.80 θ = 30° 120° 180° DC 270°60° 90° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.80 θ = 30° 60° 120° 90° 180° 270° DC θ 360° RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 0.80 θ = 30° 60° 120°90° 180° θ θ 360° RESISTIVE LOADS NATURAL CONVECTION 2310–1 571 00 23 57 1 01 23 57 1 020 100 120 TYPICAL EXAMPLE Tj = 125°C MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)BREAKOVER VOLTAGE (R GK = rkΩ ) BREAKOVER VOLTAGE (R GK = 1kΩ ) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE 100 101 102 4.0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 23100 571 01 23 57 1 02 23 57 1 03 160 100 120 140 Tj = 125°C R GK = 1kΩ TYPICAL EXAMPLE 2310–1 571 00 23 57 1 01 23 57 1 02 500 300 400 100 200 100 2310–1 571 00 23 57 1 01 23 57 1 02 102 101 10–1 VD = 100V R L = 47Ω R GK = 1kΩ Ta = 25°C TYPICAL EXAMPLE 0 1600 40 80 120 14020 60 100 VD = 50V, VR = 50V IT = 2A, RGK = 1kΩ TYPICAL EXAMPLE DISTRIBUTION 60–20–40–60 0 20 40 80 100120140 101 100 10–1 10–2 DISTRIBUTION HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)HOLDING CURRENT (R GK = rkΩ ) HOLDING CURRENT (R GK = 1kΩ ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) TURN-ON TIME VS. GATE CURRENT TURN-ON TIME (µs) GATE CURRENT (mA) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) GATE TRIGGER CURRENT (µA) TURN-OFF TIME VS. JUNCTION TEMPERATURE TURN-OFF TIME (µs) JUNCTION TEMPERATURE (°C) Tj = 25°C Tj = 25°C IGT (25°C) = 35µA R GK = 1kΩ TYPICAL EXAMPLE TYPICAL EXAMPLE IGT (25°C) IH (1kΩ ) # 1 25µA 0.9mA # 1

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE 160 120 100 0 160–40–20 20 80 140 120 140 06 0 40 100 102 100 10124 35 7 1 0 224 35 7 104 103 101 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) JUNCTION TEMPERATURE (°C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (T j = t°C) REPETITIVE PEAK REVERSE VOLTAGE (T j = 25°C) GATE CURRENT PULSE WIDTH (µs) Tj = 25°C TYPICAL EXAMPLE IGT (DC) # 1 10µA # 2 65µA # 1 # 2 REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE