CR02AM

CR02AM MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE CR02AM APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage]1 DC off-state voltage ]1 Voltage class Unit V V V V V MAXIMUM RATINGS 200 300 160 200 160 300 400 240 300 240 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, T a=30°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A W W V V A g Ratings 0.47 0.3 0.4 0.1 0.01 0.1 –40 ~ +125 –40 ~ +125 0.23 ]1. With Gate-to-cathode resistance RGK =1kΩ 400 500 320 400 320 TYPE NAME VOLTAGE CLASS2 1/CR 2/CR T

1 TERMINAL

φ5.0 MAX 4.4 5.0 MAX12.5 MIN

3.9 MAX

1.3 1.25 1.25CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Tj=125°C, VRRM applied Tj=125°C, VDRM applied, RGK =1kΩ Ta=25°C, ITM =0.6A, instantaneous value Ta=25°C, VD =6V, IT=0.1A ]3 Tj=125°C, VD=1/2VDRM , RGK =1kΩ Tj=25°C, VD =6V, IT=0.1A ]3 Tj=25°C, VD=12V, RGK =1kΩ Junction to ambient Unit mA mA V V V µA mA °C/W Typ. Symbol I RRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance ]2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) B 20 ~ 50 C 40 ~ 100 Item IGT (µA) A 1 ~ 30 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. Limits Min. 0.2 Max. 0.1 0.1 1.6 0.8 100 ] 2 180 DC IGS IGT DC 60Ω VGT TUT 1kΩ R GK A3 A2 SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ ) ]3. IGT , VGT measurement circuit. SWITCH 100 23 5 7 1 0 1 23 5 7 1 0 244 101 100 10–1 10–2 Ta = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE 102 10–2 100 101 101 10–1 100 10–223 57 23 5710–1 10223 57 23 57 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.1W PG(AV) = 0.01W VGD = 0.2V IFGM = 0.1A 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 200 100 120 140 160 180 2310 0 571 01 23 57 1 02 23 57 1 03 200 160 140 120 0 160–40 –20 20 80 140 120 100 180 06 0 40 100 # 1 # 2 IGT (25°C) # 1 32µA # 2 9µA TYPICAL EXAMPLE 14040–40–60 –20 0 20 60 80 100120 103 102 101 100 TYPICAL EXAMPLE 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160–40 –20 20 80 140 120 0.2 0.5 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.40 0.1 0.2 0.3 θ 360° θ = 30° 60° 120° 90° 180° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) See ∗3 GATE CHARACTERISTICS 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C) 100 (%)GATE CURRENT (Tj = t°C) GATE CURRENT (Tj = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.50 0.1 0.2 0.3 0.4 θ = 30° 60° 120° 90° 180° DC 270° θ 360° RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 0.50 0.1 0.2 0.3 0.4 θ 360° θ = 30° 60° 120° 90° 180° DC 270° NATURAL CONVECTION RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 0.40 0.1 0.2 0.3 θ = 30° 60° 120°90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 160 120 140 100 0 0.50 0.1 0.2 0.3 0.4 θ θ 360° θ = 30° 60° 120° 90° 180° RESISTIVE LOADS NATURAL CONVECTION 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.50 0.1 0.2 0.3 0.4 θ = 30° 60° 120° 90° 180° θ θ 360° RESISTIVE LOADS 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 TYPICAL EXAMPLE R GK = 1kΩ ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE 23100 571 01 23 57 1 02 23 57 1 03 120 100 # 1 # 2 TYPICAL EXAMPLE # 1 IGT (25°C)=10µA # 2 IGT (25°C)=66µA Tj = 125°C, RGK = 1kΩ 160 120 100 0 160–40–20 20 80 140 120 140 06 0 40 100 TYPICAL EXAMPLE 2310–1 571 00 23 57 1 01 23 57 1 020 200 300 400 500 100 # 1 # 2 2310–1 571 00 23 57 1 01 23 57 1 02 120 100 Tj = 125°C TYPICAL EXAMPLE 60–20–40–60 0 20 40 80 100120140 102 101 100 10–1 TYPICAL EXAMPLE DISTRIBUTION 103 234100 57 1 01 234 57 1 0 2 102 101 # 1 # 2 TYPICAL EXAMPLE IGT (25°C) # 1 10µA # 2 66µA BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)BREAKOVER VOLTAGE (R GK = rkΩ ) BREAKOVER VOLTAGE (R GK = 1kΩ ) HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)HOLDING CURRENT (R GK = rkΩ ) HOLDING CURRENT (R GK = 1kΩ ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE CURRENT PULSE WIDTH (µs) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (T j = t°C) REPETITIVE PEAK REVERSE VOLTAGE (T j = 25°C) Tj = 25°C IH (25°C)=1mA IGT (25°C)=25µA Tj = 25°C Tj = 25°C TYPICAL EXAMPLE IGT (25°C) IH (1kΩ ) # 1 13µA 1.6mA # 2 59µA 1.8mA