CR02AM-8A

CR02AM-8A MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE CR02AM-8A APPLICATION Strobe flasher ]1. With gate to cathode resistance RGK =1kΩ . Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, T a=30°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A W W V V A g Ratings 0.47 0.3 0.4 0.1 0.01 0.1 –40 ~ +125 –40 ~ +125 0.23 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage]1 DC off-state voltage ]1 Voltage class 400 500 320 400 320 Unit V V V V V MAXIMUM RATINGS TYPE NAME VOLTAGE CLASS2 1/CR 2/CR T

1 TERMINAL

φ5.0 MAX 4.4 5.0 MAX12.5 MIN

3.9 MAX

1.3 1.25 1.25CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

R th (j-a) Test conditions Tj=125°C, VRRM applied Tj=125°C, VDRM applied, RGK =1kΩ Tc=25°C, ITM =0.6A, instantaneous value Tj=25°C, VD =6V, IT=0.1A ]3 Tj=125°C, VD=1/2VDRM , RGK =1kΩ Tj=25°C, VD =6V, IT=0.1A ]3 Tj=25°C, VD=12V, RGK =1Ω Junction to ambient Unit mA mA V V V µA mA °C/W Typ. Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Limits Min. 0.2 Max. 0.1 0.1 1.6 0.8 100 ] 2 180 ]2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) B 20 ~ 50 C 40 ~ 100 Item IGT (µA) A 1 ~ 30 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. DC IGS IGT DC 60Ω VGT TUT 1kΩ R GK A3 A2 SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ ) ]3. IGT , VGT measurement circuit. SWITCH 100 23 5 7 1 0 1 23 5 7 1 0 244 101 100 10–1 10–2 Ta = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE 102 10–2 100 101 101 10–1 100 10–223 57 23 5710–1 10223 57 23 57 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.1W PG(AV) = 0.01W VGD = 0.2V IFGM = 0.1A MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) GATE VOLTAGE (V) GATE CURRENT (mA) 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160–40 –20 20 80 140 120 0.2 0.5 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.40 0.1 0.2 0.3 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 200 100 120 140 160 180 2310 0 571 01 23 57 1 02 23 57 1 03 200 160 140 120 0 160–40 –20 20 80 140 120 100 180 06 0 40 100 # 1 # 2 IGT (25°C) # 1 32µA # 2 9µA TYPICAL EXAMPLE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE CURRENT (Tj=t°C) GATE CURRENT (Tj=25°C) GATE CHARACTERISTICS See ]3 60–20–40–60 0 20 40 80 100120140 103 102 101 100 TYPICAL EXAMPLE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 R GK = 1kΩ TYPICAL EXAMPLE 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.50 0.1 0.2 0.3 0.4 θ = 30° 60° 120° 90° 180° θ θ 360° RESISTIVE LOADS 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.50 0.1 0.2 0.3 0.4 θ = 30° 60° 120° 90° 180° DC 270° θ 360° RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 0.40 0.1 0.2 0.3 θ = 30° 60° 120°90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 160 120 140 100 0 0.50 0.1 0.2 0.3 0.4 θ 360° θ = 30° 60° 120° 90° 180° DC 270° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 160 120 140 100 0 0.50 0.1 0.2 0.3 0.4 θ = 30° 60° 120° 90° 180° θ θ 360° RESISTIVE LOADS NATURAL CONVECTION ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE 160 120 100 0 160–40–20 20 80 140 120 140 06 0 40 100 TYPICAL EXAMPLE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) 2310–1 57 1 00 23 5 7 1 01 23 5 7 1 02 120 100 Tj = 125°C TYPICAL EXAMPLE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)BREAKOVER VOLTAGE (R GK = rkΩ ) BREAKOVER VOLTAGE (R GK = 1kΩ ) 23100 57 1 01 23 5 7 1 02 23 5 7 1 03 120 100 # 1 # 2 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) TYPICAL EXAMPLE # 1 IGT (25°C) = 10µA # 2 IGT (25°C) = 66µA Tj = 125°C, RGK = 1kΩ 60–20–40–60 0 20 40 80 100120140 102 101 100 10–1 TYPICAL EXAMPLE DISTRIBUTION HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) IH (25°C) = 1mA IGT (25°C) = 25µA Tj = 25°C 2310–1 57 1 00 23 57 1 01 23 571 0 2 200 300 400 500 100 # 1 # 2 HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)HOLDING CURRENT (R GK = rkΩ ) HOLDING CURRENT (R GK = 1kΩ ) Tj = 25°C IGT (25°C) # 1 13µA # 2 59µA TYPICAL EXAMPLE I H (1kΩ ) 1.6mA 1.8mA 23100 547 1 0 1 23 4 57 1 0 2 101 102 103 # 1 # 2 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) TYPICAL EXAMPLE IGT (25°C) # 1 10µA # 2 66µA Tj = 25°C