CQ39BS CENTRAL | Alldatasheet
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Semiconductor Corp. TM R1 (18-August 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ39BS series type is a hermetically sealed silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ39BS CQ39DS CQ39MS CQ39NS UNITS Peak Repetitive Off-State Voltage V DRM 200 400 600 800 V RMS On-State Current (TC=80°C) I T(RMS) 4.0 A Peak One Cycle Surge (t=10ms) I TSM 35 A I2t Value for Fusing (t=10ms) I 2t 2.0 A 2s Peak Gate Power (tp=10µs) P GM 3.0 W Average Gate Power Dissipation P G(A V) 0.2 W Peak Gate Current (tp=10µs) I GM 1.2 A Storage Temperature T stg -40 to +150 °C Junction Temperature T J -40 to +125 °C Thermal Resistance ΘJA 160 °C/W Thermal Resistance ΘJC 9.0 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM Rated VDRM, RGK=1KΩ 10 µA IDRM Rated VDRM, RGK=1KΩ, TC=125°C 200 µA IGT VD=12V, QUAD I, II, III 2.5 5.0 mA IGT VD=12V, QUAD IV 5.5 9.0 mA IH RGK=1KΩ 1.6 5.0 mA VGT VD=12V, QUAD I, II, III, IV 2.0 V VTM ITM=6.0A, tp=380µs 1.75 V dv/dt V D=2/3 VDRM, TC=125°C 11 V/µs
A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8.51 C - 0.040 - 1.02 D 0.240 0.260 6.10 6.60 E 0.500 - 12.70 - F (DIA) 0.016 0.021 0.41 0.53 G (DIA) H I 0.028 0.034 0.71 0.86 J 0.029 0.045 0.74 1.14 TO-39 (REV: R1) 0.200 0.100 5.08 2.54 DIMENSIONS SYMBOL INCHES MILLIMETERS Central Semiconductor Corp. TM TO-39 CASE - MECHANICAL OUTLINE CQ39BS CQ39DS CQ39MS CQ39NS TRIAC R1 (18-August 2004) LEAD CODE: 1) MT1 2) GATE 3) MT2 MARKING CODE: FULL PART NUMBER