CPS130 CENTRAL | Alldatasheet
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Technical content
Silicon Controlled Rectifier
16 Amp Sensitive Gate SCR Chip
Process Glass Passivated Mesa Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (4- January 2006) GROSS DIER PER 4 INCH WAFER 624