CPS110 CENTRAL | Alldatasheet
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Technical content
Silicon Controlled Rectifier
12 Amp Sensitive Gate SCR Chip
Process Glass Passivated Mesa Die Size 110 x 110 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 80 x 40 MILS Gate Bonding Pad Area 31 x 31 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (4- January 2006) GROSS DIER PER 4 INCH WAFER 876