CPS090 CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Silicon Controlled Rectifier
8.0 Amp Sensitive Gate SCR Chip
Process Glass Passivated Mesa Die Size 90 x 90 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 60 x 30 MILS Gate Bonding Pad Area 22 x 22 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (4- January 2006) GROSS DIER PER 4 INCH WAFER 1,310