CPS041 CENTRAL | Alldatasheet
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145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PRINCIPAL DEVICE TYPES CS18D BRX49 CS92D CS89M GEOMETRY PROCESS DETAILS R1 (19 -May 2005) Process GLASS PASSIVATED MESA Die Size 41 x 41 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 18 x 8 MILS Gate Bonding Pad Area 7.1 x 7.1 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Au - 10,000Å GROSS DIE PER 4 INCH WAFER 6,474
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPS041 Typical Electrical Characteristics R1 (19 -May 2005)