CPM2-1200-0080B CREE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Resistant to Latch-Up
- Halogen Free, RoHS Compliant Benefits
- Higher System Efficiency
- Reduced Cooling Requirements
- Increased System Switching Frequency
Applications
- Solar Inverters
- High Voltage DC/DC Converters
- Motor Drives
- Switch Mode Power Supplies
- UPS Package Part Number Package CPM2-1200-0080B Die VDS 1200 V I D @ 25˚C 31.6 A RDS(on) 80 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note IDS (DC) Continuous Drain Current 31.6 A VGS@20 V, TC = 25˚C Note 1
20 VGS@20 V, TC = 100˚C
IDS (pulse) Pulsed Drain Current 60 A Pulse width tP limited by Tjmax TC = 25˚C VGS Gate Source Voltage -10/+25 V TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C Note 1: Assumes a RθJC < 0.60 K/W f
CPM2-1200-0080B Rev. - Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.7 2.2 V VDS = 10V, ID = 1 mA Fig. 73.2 VDS = 10V, ID = 10 mA 1.2 1.7 VDS = 10V, ID = 1 mA IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V 10 250 VDS = 1200 V, VGS = 0 V TJ = 150ºC IGSS Gate-Source Leakage Current 0.25 μA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 80 98 mΩ VGS = 20 V, ID = 20 A Fig. 7 150 208 VGS = 20 V, ID = 20A, TJ = 150ºC gfs Transconductance 9.8 S VDS= 20 V, IDS= 20 A Fig. 6
8.5 VDS= 20 V, IDS= 20 A, TJ = 150ºC
Ciss Input Capacitance 950 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 15Coss Output Capacitance 80 Crss Reverse Transfer Capacitance 6.5 Eoss Coss Stored Energy 40 μJ Fig. 14 RG Internal Gate Resistance 4.6 Ω f = 1 MHz, VAC = 25 mV Built-in SiC Body Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.3 V VGS = -5 V, IF=10 A, TJ = 25 ºC Fig. 9
3.1 VGS = -2 V, IF=10 A, TJ = 25 ºC
trr Reverse Recovery Time 40 ns VGS = -5 V, IF=20 A, TJ = 25 ºC VR = 800 V, diF/dt= 350 A/μs Qrr Reverse Recovery Charge 165 nC Irrm Peak Reverse Recovery Current 6.4 A Gate Charge Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note Qgs Gate to Source Charge 10.8 nC VDS = 800 V, VGS = 0/20 V ID =20 A Per JEDEC24 pg 27 Fig. 16Qgd Gate to Drain Charge 18.0 Qg Gate Charge Total 49.2 * NOTE 1: For inductive and resistive switching data and waveforms please refer to data- sheet for packaged device. Part number C2M0080120D.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.6 CPM2-1200-0080B Rev. - Cree, Inc.
4600 Silicon Drive
Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Parameter Typical Value Unit Die Dimensions (L x W) 3.10 × 3.36 mm Exposed Source Pad Metal Dimensions (LxW) Each 1.04 × 1.43 mm Gate Pad Dimensions (L x W) 0.80 × 0.50 mm Die Thickness 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm Bottom Drain metallization (Ni/Ag) 0.8 / 0.6 µm Chip Dimensions Mechanical Parameters