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Document overview

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Technical content

Features

  • New C2M SiC MOSFET technlogy
  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC converters
  • Battery Chargers
  • Motor Drives
  • Pulsed Power Applications Chip Outline Part Number Die Size (mm) CPM2-1200-0040B 3.10 x 5.90 VDS 1200 V I D @ 25˚C 36 A RDS(on) 40 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current A VGS = 20 V, TC = 25˚C Note 1

40 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s TProc Maximum Processing Temperature 325 ˚C 10 min. maximum Note (1): Assumes a RθJC < 0.38 K/W

CPM2-1200-0040B Rev. B Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.4 2.8 V VDS = 10 V, ID = 10mA Fig. 11 1.8 2.0 V VDS = 10 V, ID = 10mA,TJ = 150 °C IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 40 52 mΩ VGS = 20 V, ID = 40 A Fig. 4,5,684 VGS = 20 V, ID = 40 A, TJ = 150 °C gfs Transconductance 15.1 S VDS= 20 V, IDS= 40 A Fig. 7

13.2 VDS= 20 V, IDS= 40 A, TJ = 150 °C

Ciss Input Capacitance 1893 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17,18Coss Output Capacitance 150 Crss Reverse Transfer Capacitance 10 Eoss Coss Stored Energy 82 μJ Fig 16 EAS Avalanche Energy, Single Pluse 2 J ID = 40A, VDD = 50V Fig. 29 EON Turn-On Switching Energy 1.0 mJ VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 80 μH Fig. 25 EOFF Turn Off Switching Energy 0.4 td(on) Turn-On Delay Time 15 ns VDD = 800 V, VGS = -5/20 V ID = 40 A RG(ext) = 2.5 Ω, RL = 20 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Fig. 27 tr Rise Time 52 td(off) Turn-Off Delay Time 26 tf Fall Time 34 RG(int) Internal Gate Resistance 1.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 28 nC VDS = 800 V, VGS = -5/20 V ID = 40 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 37 Qg Total Gate Charge 115 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.3 V VGS = - 5 V, ISD = 20 A, TJ = 25 °C Fig. 8, 9,

103.1 V VGS = - 5 V, ISD = 20 A, TJ = 150 °C

IS Continuous Diode Forward Current 60 A TC= 25 °C Note 2 trr Reverse Recovery Time 54 ns VGS = - 5 V, ISD = 40 A TJ = 25 °C VR = 800 V dif/dt = 1000 A/µs Note 2Qrr Reverse Recovery Charge 283 nC Irrm Peak Reverse Recovery Current 15 A Note (2): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.34 0.38 °C/W Fig. 21 RθJC Thermal Resistance from Junction to Ambient 40 Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device. Part number C2M0040120D.

CPM2-1200-0040B Rev. B Parameter Typical Value Unit Die Dimensions (L x W) 3.10 x 5.90 mm Exposed Source Pad Metal Dimensions (LxW) Each 1.04 x 3.97 (x2) mm Gate Pad Dimensions (L x W) 0.80 x 0.50 mm Die Thickness 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm Bottom Drain metallization (Ni/Ag) 0.8 / 0.6 µm Chip Dimensions Mechanical Parameters 5.90 mm 3.97 mm 3.10 mm 0.8 mm 0.5 mm 1.04 mm 0.54 mm Gate Source Source 1.04 5.90 mm 3.97 mm 0.43 mm0.43 mm 2.24 mm 0.79 mm

CPM2-1200-0040B Rev. B Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: www.cree.com/power
  • SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power
  • Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power