CPD91 CENTRAL | Alldatasheet
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Technical content
Low Leakage Switching Diode Chip PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (20- January 2006) GROSS DIE PER 4 INCH WAFER 94,130 Central Semiconductor Corp. TM