CPD80 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD80 Switch Diode High Voltage Switching Diode Chip PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 1N3070 CMDD2003 CMDD2004 GEOMETRY PROCESS DETAILS BACKSIDE CATHODE R2 (22-October 2003) Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GROSS DIE PER 4 INCH WAFER 45,050
Semiconductor Corp. TM PROCESS CPD80 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (22-October 2003)