CPD71 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CPD71 Low Leakage Diode Low Leakage Switching Diode Chip PRINCIPAL DEVICE TYPES CMPD6001 GEOMETRY PROCESS DETAILS BACKSIDE CATHODE R1 (1-August 2002) Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 94,130
Semiconductor Corp. TM PROCESS CPD71 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002)