CPD69-1N4246 CENTRAL | Alldatasheet
Document overview
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Technical content
General Purpose Rectifier Die
1.0 Amp, 400 Volt
Die Size 42.5 x 42.5 MILS Die Thickness 11.0 MILS Anode Bonding Pad Size 24 x 24 MILS Top Side Metalization Ni/Au – 5,000Å/1,350Å Back Side Metalization Ni/Au – 5,000Å/1,350Å Scribe Alley Width 2.76 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 5,915 The CPD69-1N4246 is a silicon 1.0 Amp, 400 Volt general purpose rectifi er ideal for all types of commercial, industrial, entertainment, and computer applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 400 V DC Blocking Voltage V R 400 V RMS Reverse Voltage V R(RMS) 280 V Average Forward Current (TA=55°C) I O 1.0 A Peak Forward Surge Current, tp=8.3ms I FSM 40 A Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise) SYMBOL TEST CONDITIONS MIN MAX UNITS IR V R=400V 1.0 μA VF I F=1.0A 1.2 V CJ V R=0, f=1.0MHz 40 pF trr I F=0.5A, IR=1.0A, Irr=0.25A 5.0 μs R2 (26-March 2019) www.centralsemi. com
Typical Electrical Characteristics R2 (26-March 2019) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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