CPD63 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE CATHODE R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 94,130
Semiconductor Corp. TM PROCESS CPD63 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)