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Technical content
GROSS DIE PER 5 INCH WAFER 89,720 PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å BACKSIDE CATHODE www.centralsemi.com R3 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R3 (22-March 2010)