CPD31X CENTRAL | Alldatasheet

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Technical content

10A, 60V Schottky Rectifi er Die CPD31X CPD34X Features:

  • Low forward voltage at 10 Amps forward current
  • Low reverse leakage current
  • Low profile geometry
  • Metalization suitable for standard die attached technologies
  • Top metalization optimized for solder process (CPD31X)
  • Top metalization optimized for wire bonding (CPD34X) Maximum Ratings (TA = 25˚C) Electrical Characteristics (TA = 25˚C unless otherwise noted) VRRM (V) MAX VR (V) MAX IO (A) MAX IFSM (A) MAX TJ, Tstg (˚C) MAX BVR (V) MIN V F @ I F (V) (V) (A) TYP MAX I R @ V R (V) TYP MAX MAX 60 60 10 250 -65 to +150 60 0.49 0.59 0.67 5.0 75μA 500μA *50mA *60
  • Energy efficiency
  • High temperature characterization
  • Space savings Benefits: Applications:
  • Optimized for use as a by-pass rectifier in low profile solar (PV) panels
  • Reverse polarity protection
  • OR-ing diode To order samples contact: Central’s Sales department 631-435-1110 To order the latest Chip databook, visit: web.centralsemi.com/search/sample.php Die Size 85 MILS x 85 MILS Die Thickness 5.9 MILS ±0.8 MILS Die Passivation SiN Anode Bonding Pad Area 78 MILS x 78 MILS Top Side Metalization (CPD31X) Al/Ni/Au - 30,000Å/4,000Å/1,500Å Top Side Metalization (CPD34X) Al - 30,000Å Back Side Metalization Ti/Ni/Au - 1,600Å/5,550Å/1,500Å Scribe Alley Width 3.15 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 2,260 *TA=100˚C Typical Electrical Characteristics Samples Literature 145 Adams Avenue • Hauppauge • New York • 11788 • USA • www.centralsemi.com CPD31X CPD34X Product BriefProduct Brief

For further information contact: Sales at Central Semiconductor Corp. (631) 435-1110 or visit our website at: www.centralsemi.com Innovative Discrete Semiconductors Packing Information Wafer Form

  • 100% tested with rejects inked
  • Use - WN suffix when ordering Anti-Static Polyethylene Protective Layer ESD Protective Container Anti-Static Foam Anti-Static Foam Wafer Anti-Static Polyethylene Protective Layer Anti-Static Foam Anti-Static Foam ESD Protective Lid Sawn Wafer Sawn Wafer Adhesive Mem brane Adhesive Mem brane Metal Frame Plastic Ring Sawn Wafer
  • Available on metal frame or plastic ring
  • 100% tested with rejects inked.
  • Mounted on adhesive membrane on a metal frame or plastic ring.
  • Use - WS suffix when ordering for metal frame
  • Use - WR suffix when ordering for plastic ring. Chip Form
  • Waffle Packed.
  • Use: -CT, -CM, -CTO suffix when ordering.
  • -CT (100% tested with rejects removed).
  • -CM (100% tested and 100% visually inspected per MIL-STD-750, [method 2072 transistors] [method 2073 diodes] with rejects removed).
  • -CTO (100% tested with rejects removed, die orientation as specified by customer.) ESD Protective Cover Anti-Static Polyethylene Protective Layer ESD Protective Chip Tray

145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

60V, 10A Schottky Rectifi er Chip CPD31X CPD34X