CPD26 CENTRAL | Alldatasheet
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Technical content
Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD26 Fast Recovery Rectifier
8 Amp Glass Passivated Rectifier Chip
R1 (1-August 2002) Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GROSS DIE PER 4 INCH WAFER 1,170
Semiconductor Corp. TM The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at: www.centralsemi.com/chip PROCESS CPD26 Typical Electrical Characteristics R1 (1-August 2002) Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com