CPD25 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD25 Fast Recovery Rectifier
3 Amp Glass Passivated Rectifier Chip
R1 (1-August 2002) Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GROSS DIE PER 4 INCH WAFER 1,490 The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at: www.centralsemi.com/chip