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Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply Low RDS(on) at Cold Temperatures Low On-Resistance: 10 max. at 25ºC High Input Impedance High Breakdown Voltage: 250VP Low V GS(off) Voltage: -1.6 to -3.9V Small Package Size SOT -89 The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3710 is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3710 offers a low, 10 maximum, on-state resistance at 25ºC. The CPC3710 has a minimum breakdown voltage of 250V P , and is available in an SOT -89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.(SOT -89) G D S D Circuit Symbol S G D Part # Description CPC3710C N-Channel Depletion Mode FET , SOT -89 Pkg. Cut-T ape, Available in Quantities of 200, 300, 400, 500, and 600 CPC3710CTR N-Channel Depletion Mode FET , SOT -89 Pkg. T ape and Reel (1000/Reel)
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings @ 25ºC Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Ratings Units Drain-to-Source Voltage 250 V P Gate-to-Source Voltage ±15 V P Pulsed Drain Current 600 mA T otal Package Dissipation 1 1.4 W Junction T emperature 150 ºC Operational T emperature -55 to +125 ºC Storage T emperature -55 to +125 ºC 1 Mounted on FR4 board 1"x1"x0.062" 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. ton td(on) toff td(off) INPUT INPUT OUTPUT VDS Rgen -10V tf tr Switching Waveform & Test Circuit Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V (BR)DSX VGS= -5V , ID=100µA 250 - - V P Gate-to-Source Off Voltage V GS(off) VDS= 5V , ID=1mA -1.6 - -3.9 V Change in VGS(off) with T emperatures dV GS(off)/dT V DS= 5V , ID=1A - - 4.5 mV / ºC Gate Body Leakage Current I GSS VGS=±15V , VDS=0V - - 100 nA Drain-to-Source Leakage Current I D(off) VGS= -5V , VDS=250V - - 1 µA VGS= -5V , VDS=200V , TA=125ºC - - 1 mA Saturated Drain-to-Source Current I DSS VGS= 0V , VDS=15V 220 - - mA Static Drain-to-Source On-State Resistance R DS(on) VGS= 0V , ID=220mA - - 10 Change in RDS(on) with T emperatures dR DS(on) / dT V GS= 0V , ID=220mA - - 1.1 % / ºC Forward T ransconductance G FS ID= 100mA, VDS = 10V 225 - - m Input Capacitance C ISS VGS= -5V VDS= 25V f= 1MHz 100 350 pFCommon Source Output Capacitance C OSS 30 80 Reverse T ransfer Capacitance C RSS 15 40 T urn-On Delay Time t d(on) VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= 50 23 35 nsRise Time t r 82 0 T urn-Off Delay Time t d(off) 17 25 Fall time t f 70 80 Source-Drain Diode Voltage Drop V SD VGS= -5V , ISD= 150mA - 0.6 1.8 V Thermal Resistance (Junction to Ambient) R JA - - 90 - ºC/W
PERFORMANCE DATA* *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please contact our application department. Output Characteristics (TA=25ºC) VDS (V) ID (mA) 0 1 2 3 4 5 300 270 240 210 180 150 120 VGS=0.0V VGS=-2.0V VGS=-1.5V VGS=-1.0V Transfer Characteristics (VDS=5V) VGS (V) ID (mA) 350 300 250 200 150 100 +25ºC -40ºC +125ºC VGS(off) vs. Temperature (VDS=10V, ID=1mA) -40 -0 40 80 120 Temperature (ºC) VGS(off) (V) -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 RON vs. Temperature (VGS=0V, ID=100mA) -40 -0 40 80 120 14.0 12.0 10.0 8.0 6.0 4.0 2.0 Temperature (ºC) RON (Ω) Ambient Temperature (ºC) 0 20 40 60 80 100 120 140 Power (W) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Power Dissipation vs. Ambient Temperature Transconductance Vs. Drain Current (VDS=10V) ID (mA) 0 10 20 30 40 300 250 200 150 100 50 60 70 80 100 90 GFS (m )Ω -55ºC +125ºC +25ºC Drain-Source Voltage (V) 0.1 1 10 100 1000 Drain Current (A) 0.001 0.01 0.1 Max Rated Safe Operating Area Capacitance vs. Drain Source Voltage (VGS=-5V) VDS (V) Capacitance (pF) 0 10 20 160 140 120 100 30 40 CISS CRSS COSS On-Resistance vs. Drain Current (VGS=0V) ID (A) RON (Ω) 0 0.06 0.12 0.18 0.24 0.3
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. Clare classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating CPC3710C MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device Maximum Temperature x Time CPC3710C 260ºC for 30 seconds Board Wash Clare recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. RoHS 2002/95/EC e3Pb
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice. Specification: DS-CPC3710-R00D ©Copyright 2012, Clare, Inc. All rights reserved. Printed in USA. 3/12/2012 For additional information please visit our website at: www.clare.com CPC3710
5 PRELIMINARY
(inches MIN / inches MAX) 2.286 / 2.591 (0.090 / 0.102) 3.937 / 4.242 (0.155 / 0.167) 1.397 / 1.600 (0.055 / 0.063) 0.356 / 0.432 (0.014 / 0.017) 1.626 / 1.829 (R 0.010) 0.889 / 1.194 (0.035 / 0.047) 0.356 / 0.483 (0.014 / 0.019) 0.432 / 0.559 (0.017 / 0.022) 4.394 / 4.597 (0.173 / 0.181) 1.422 / 1.575 (0.056 / 0.062) 2.921 / 3.073 (0.115 / 0.121) 0.60 (0.024) TYP 3 1.40 (0.055) 2.45 (0.096) 1.90 (0.075) 1.90 (0.074) 45º 5.00 (0.197) 50º PCB Land Pattern Pin 1 CPC3710C CPC3710C Tape & Reel Dimensions mm (inches)Embossment Embossed Carrier
177.8 Dia
(7.00 Dia) Top Cover Tape Thickness
0.102 Max
(0.004 Max) W=12.00 ± 0.3 (0.472 ± 0.012) B0=4.60 ± 0.1 (0.181 ± 0.004) A0=4.80 ± 0.1 (0.189 ± 0.004) P=8.00 ± 0.1 (0.315 ± 0.004) K0=1.80 ± 0.1 (0.071 ± 0.004) 2.00 ± 0.05 (0.079 ± 0.002) 4.00 ± 0.1 (0.157 ± 0.004) 1.75 ± 0.1 (0.069 ± 0.004) 5.50 ± 0.05 (0.217 ± 0.002)