CP792 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP792V Small Signal Transistor PNP - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906 GEOMETRY PROCESS DETAILS BACKSIDE COLLECTOR R1 (15 -April 2005) Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GROSS DIE PER 4 INCH WAFER 93,826
Semiconductor Corp. TM R1 (15 -April 2005) Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP792V Typical Electrical Characteristics