CP771 CENTRAL | Alldatasheet

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MECHANICAL SPECIFICATIONS: Die Size 55 x 32 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 7.3 x 7.3 MILS Source Bonding Pad Area 50 x 25 MILS Top Side Metalization Al – 40,000Å Back Side Metalization Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å Scribe Alley Width 3.15 MILS Wafer Diameter 8 INCHES Gross Die Per Wafer 25,200 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS 25 V Continuous Drain Current (Steady State) I D 6.0 A Maximum Pulsed Drain Current, tp=10μs I DM 20 A Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=25V, VDS=0 100 nA IDSS V DS=40V, VGS=0 1.0 μA BVDSS V GS=0, ID=250μA 40 V VGS(th) VGS=VDS, ID=250μA 1.0 2.0 3.0 V VSD V GS=0, IS=2.0A 1.2 V rDS(ON) V GS=10V, ID=6.0A 48 65 mΩ rDS(ON) V GS=4.5V, ID=4.0A 80 95 mΩ R0 (1-April 2013) The CP771 medium power P-Channel MOSFET is optimized for power management and drive circuit applications where energy effi ciency is a critical design element. The 7.5 mil thick die provides an ultra low profi le device that is readily attached via wire bond techniques. Parametrically, low on-resistance and gate charge characteristics maximize effi cient operation. FEATURES:

  • Low on-resistance, rDS(ON) • Low profile geometry
  • Low gate charge, Qgs • Metalization suitable for standard die attach technologies
  • High drain current density • Top metalization optimized for wire bonding APPLICATIONS:
  • Power management • Load switching
  • Motor drives • DC-DC conversion www.centralsemi. com

Crss V DS=25V, VGS=0, f=1.0MHz 61 pF Ciss V DS=25V, VGS=0, f=1.0MHz 750 pF Coss VDS=25V, VGS=0, f=1.0MHz 56 pF Qg(tot) VDS=32V, VGS=4.5V, ID=6.0A 6.5 nC Qgs VDS=32V, VGS=4.5V, ID=6.0A 3.2 nC Qgd VDS=32V, VGS=4.5V, ID=6.0A 2.7 nC ton VDS=20V, VGS=10V, ID=1.0A 18 ns toff RG=3.0Ω, RL=20Ω 64 ns ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS R0 (1-April 2013) CP771 P-Channel MOSFET Die Enhancement-Mode www.centralsemi. com

Typical Electrical Characteristics R0 (1-April 2013) www.centralsemi. com