CP720 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP720 Small Signal Transistor PNP - High Current Transistor Chip PRINCIPAL DEVICE TYPES MPSA55 MPSA56 Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.7 X 4.0 MILS Emitter Bonding Pad Area 5.3 X 4.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com BACKSIDE COLLECTOR GEOMETRY R3 (21-September 2003) GROSS DIE PER 4 INCH WAFER 22,400
Semiconductor Corp. TM PROCESS CP720 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003)