CP681 CENTRAL | Alldatasheet
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PNP - Silicon RF Transistor Die 50mA, 20 Volt MECHANICAL SPECIFICATIONS: Die Size 15 x 15 MILS Die Thickness 7.9 MILS Base Bonding Pad Area 2.3 MIL DIAMETER Emitter Bonding Pad Area 2.3 MIL DIAMETER Top Side Metalization Al-Si – 13,000Å Back Side Metalization Au – 12,000Å Scribe Alley Width 3.0 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 74,000 The CP681 is a silicon PNP RF transistor designed for general purpose RF amplifi er and mixer applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 20 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 3.0 V Continuous Collector Current I C 50 mA Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=10V 100 nA IEBO V EB=2.0V 100 nA BVCBO I C=10μA 20 V BVCEO I C=1.0mA 20 V BVEBO I E=10μA 3.0 V VCE(SAT) I C=5.0mA, IB=500μA 0.5 V VBE(ON) V CE=10V, IC=5.0mA 0.9 V hFE V CE=10V, IC=5.0mA 60 fT V CE=10V, IC=5.0mA, f=100MHz 600 MHz Ccb V CB=10V, IE=0, f=1.0MHz 0.85 pF Cce V CB=10V, IB=0, f=1.0MHz 0.65 pF R0 (8-October 2013) www.centralsemi. com
Typical Electrical Characteristics R0 (8-October 2013) www.centralsemi. com