CP664V-2N2608 CENTRAL | Alldatasheet
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Technical content
Die Thickness 7.9 MILS Drain Bonding Pad Size 4.2 MILS DIAMETER Source Bonding Pad Size 4.2 MILS DIAMETER Gate Bonding Pad Size 2.9 x 5.3 MILS Top Side Metalization Al-Si – 17,000Å Back Side Metalization Au – 12,000Å Scribe Alley Width 1.96 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 41,575 The CP664V-2N2608 is a silicon P-Channel JFET designed for low level amplifier applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Gate Voltage VDrain-Gate Voltage VDGDG 30 V 30 V Drain-Source Voltage VDrain-Source Voltage VDS DS 30 V30 V Gate-Source Voltage VGS 30 V Continuous Gate Current IG 50 mA Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSS V GS=5.0V, VDS=0 10 nA IDSS* V DS=5.0V, VGS=0 0.9 4.5 mA BVGSS I G=1.0µA 30 V VGS(OFF) V DS=5.0V, ID=1.0μA 1.0 4.0 V |yfs| V DS=5.0V, VGS=0, f=1.0kHz 1.0K μS Ciss V DS=5.0V, VGS=1.0V, f=140kHz 17 pF NF V DS=5.0V, VGS=0, f=1kHz, R G=1.0MΩ, BW=1.0Hz 3.0 dB *Pulse width < 100msec, Duty cycle <10% R0 (03-May 2022) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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