CP645 CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES MJE15031 GEOMETRY PROCESS DETAILS R0 (4- April 2005) Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Cr / Ni / Ag - 10,000Å GROSS DIE PER 4 INCH WAFER 640 Central Semiconductor Corp. TM PROCESS CP645 Power Transistor PNP, 8.0A Power Transistor Chip