CP622 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP622 Programmable Unijunction Transistor PRINCIPAL DEVICE TYPES 2N6027 GEOMETRY PROCESS DETAILS Process PLANAR PASSIVATED Die Size 27.5 x 27.5 MILS Die Thickness 11 MILS Anode Bonding Pad Area 7.1 x 5.1 MILS Cathode Bonding Pad Area 7.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å GROSS DIE PER 4 INCH WAFER 14,930 R3 (4- February 2004) BACKSIDE GATE
Semiconductor Corp. TM PROCESS CP622 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (4- February 2004)