CP611 CENTRAL | Alldatasheet
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Technical content
Semiconductor Corp. TM PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES CJD42C TIP42C Process EPITAXIAL BASE Die Size
80 X 99 MILS
12.5 ± 1 MILS Base Bonding Pad Area
12 X 32 MILS
13 X 46 MILS
Al - 50,000Å Back Side Metalization Cr/Ni/Ag - 16,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE COLLECTOR R3 (21-September 2003) GROSS DIE PER 4 INCH WAFER 1,450
Semiconductor Corp. TM PROCESS CP611 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003)